We fabricate pentacene-based organic field effect transistors(OFETs),inserting a transition metal oxide(V_(2)O_(5))layer between the pentacene and Al source−drain(S/D)electrodes.The performance of the devices with V_(...We fabricate pentacene-based organic field effect transistors(OFETs),inserting a transition metal oxide(V_(2)O_(5))layer between the pentacene and Al source−drain(S/D)electrodes.The performance of the devices with V_(2)O_(5)/Al S/D electrodes is considerably improved compared to the pentacene−based OFET with only Al S/D electrodes.After the 10-nm V2O5 layer modification,the effective field-effect mobility of the devices increases from 2.7×10^(−3) cm^(2)/V⋅s to 8.93×10−1 cm^(2)/V⋅s.Owing to the change of the injection property,the effective threshold voltage(Vth)is changed from−7.5 V to−5 V and the on/off ratio shifts from 102 to 104.Moreover,the dispersion of sub−threshold current in the devices disappears.These performance improvements are ascribed to the low carrier injection barrier and the reduction of contact resistance.It is indicated that V2O5 layer modification is an effective approach to improve pentacene-based OFET performance.展开更多
We fabricate N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and pentacene heterostructure organic field effect transistors with a MoO_(3) ultrathin layer between Al source-drain electrode and active laye...We fabricate N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and pentacene heterostructure organic field effect transistors with a MoO_(3) ultrathin layer between Al source-drain electrode and active layer.By inserting the MoO_(3) layer,the injection barrier of hole carriers is lowered and the contact resistance is reduced.Thus,the performance of the device is improved.The device shows typical ambipolar transport characteristics with effective hole mobility of 4.838×10^(-3) cm^(2)/V·s and effective electron mobility of 1.909×10^(-3) cm^(2)/V·s,respectively.This result indicates that using a MoO_(3) ultrathin 1ayer is an effective way to improve the performance of ambipolar organic field effect transistors.展开更多
The performance of polymer field-effect transistors is improved by thermal crosslinking of poly(3-hexylthiophene),using ditert butyl peroxide as the crosslinker.The device performance depends on the crosslinker concen...The performance of polymer field-effect transistors is improved by thermal crosslinking of poly(3-hexylthiophene),using ditert butyl peroxide as the crosslinker.The device performance depends on the crosslinker concentration significantly.We obtain an optimal on/off ratio of 105 and the saturate field-effect mobility of 0.34 cm2V−1s−1,by using a suitable ratios of ditert butyl peroxide,0.5 wt%of poly(3-hexylthiophene).The microstructure images show that the crosslinked poly(3-hexylthiophene)active layers simultaneously possess appropriate crystallinity and smooth morphology.Moreover,crosslinking of poly(3-hexylthiophene)prevents the transistors from large threshold voltage shifts under ambient bias-stressing,showing an advantage in encouraging device environmental and operating stability.展开更多
基金Supported by the National Natural Science Foundation under Grant No 61076065the Natural Science Foundation of Tianjin(No 07JCYBJC12700).
文摘We fabricate pentacene-based organic field effect transistors(OFETs),inserting a transition metal oxide(V_(2)O_(5))layer between the pentacene and Al source−drain(S/D)electrodes.The performance of the devices with V_(2)O_(5)/Al S/D electrodes is considerably improved compared to the pentacene−based OFET with only Al S/D electrodes.After the 10-nm V2O5 layer modification,the effective field-effect mobility of the devices increases from 2.7×10^(−3) cm^(2)/V⋅s to 8.93×10−1 cm^(2)/V⋅s.Owing to the change of the injection property,the effective threshold voltage(Vth)is changed from−7.5 V to−5 V and the on/off ratio shifts from 102 to 104.Moreover,the dispersion of sub−threshold current in the devices disappears.These performance improvements are ascribed to the low carrier injection barrier and the reduction of contact resistance.It is indicated that V2O5 layer modification is an effective approach to improve pentacene-based OFET performance.
基金Supported by the Natural National Science Foundation of China under Grant No 61076065the Natural Science Foundation of Tianjin(No 07JCYBJC12700).
文摘We fabricate N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and pentacene heterostructure organic field effect transistors with a MoO_(3) ultrathin layer between Al source-drain electrode and active layer.By inserting the MoO_(3) layer,the injection barrier of hole carriers is lowered and the contact resistance is reduced.Thus,the performance of the device is improved.The device shows typical ambipolar transport characteristics with effective hole mobility of 4.838×10^(-3) cm^(2)/V·s and effective electron mobility of 1.909×10^(-3) cm^(2)/V·s,respectively.This result indicates that using a MoO_(3) ultrathin 1ayer is an effective way to improve the performance of ambipolar organic field effect transistors.
基金by the National Natural Science Foundation of China under Grant Nos 60676051,60876046,60976048 and 61076065,Tianjin Natural Science Foundation(06TXTJJC14603,07JCYBJC12700)Key Project of the Ministry of Education of China(209007)+2 种基金Tianjin Natural Science Council(10ZCKFGX01900)Scientific Developing Foundation of Tianjin Education Commission(20100723)the Tianjin Key Discipline of Material Physics and Chemistry.
文摘The performance of polymer field-effect transistors is improved by thermal crosslinking of poly(3-hexylthiophene),using ditert butyl peroxide as the crosslinker.The device performance depends on the crosslinker concentration significantly.We obtain an optimal on/off ratio of 105 and the saturate field-effect mobility of 0.34 cm2V−1s−1,by using a suitable ratios of ditert butyl peroxide,0.5 wt%of poly(3-hexylthiophene).The microstructure images show that the crosslinked poly(3-hexylthiophene)active layers simultaneously possess appropriate crystallinity and smooth morphology.Moreover,crosslinking of poly(3-hexylthiophene)prevents the transistors from large threshold voltage shifts under ambient bias-stressing,showing an advantage in encouraging device environmental and operating stability.
