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Fabrication and Photocatalytic Characteristics of TiO_2 Films on Silicon Substrates
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作者 YANGJia-long WANGFu +2 位作者 ZUOLiang YIGu-chul choiwong-yong 《Wuhan University Journal of Natural Sciences》 EI CAS 2005年第3期581-586,共6页
Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposit... Silicon (111) and Silicon (100) have been employed for fabrication of TiO_2films by metal organic chemical vapor deposition (MOCVD). Titanium (IV) isopropoxide (Ti[O(C_3H_7)_4]) was used as a precursor. The as-deposited TiO_2 films have been characterized withField emission scanning electron microscopy (FE-SEM), X ray diffraction (XRD) and atomic forcemicroscopy (AFM). The photocatalytic properties were investigated by decomposition of aqueous orangeII. The crystalline and structural propertiesof TiO_2 film had crucial influences on thephotodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivitiesvaried following a shape of 'M': At lower (350 °C ) middle (500 °C) and higher (800 °C)temperature of deposition, relative lower photodegradation activities have been observed. At 400 °Cand 700 'C of deposition, relative higher efficiencies of degradation have been obtained, becauseone predominant crystallite orientation could be obtained as deposition at those two temperatures,especially a single anatase crystalline TiO_2 film could be obtained at 700 °C growth. 展开更多
关键词 MOCVD photocatalystic degradation silicon (100)
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