High-speed silicon photonic electro-optic Kerr modulation

Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations.Beyond the plasma dispersion modulation,an alternative solution in silicon is to exploit the DC Kerr effect,which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field.Although some theoretical and experimental studies have shown its existence in silicon,limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far.This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides.The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations,and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides.High-speed optical modulation response is analyzed,and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c.voltage of 30 V.This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation.

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm platform.By pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were obtained.Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

Supercontinuum generation in silicon photonics platforms

Nonlinear optics has not stopped evolving,offering opportunities to develop novel functionalities in photonics.Supercontinuum generation,a nonlinear optical phenomenon responsible for extreme spectral broadening,attracts the interest of researchers due to its high potential in many applications,including sensing,imaging,or optical communications.In particular,with the emergence of silicon photonics,integrated supercontinuum sources in silicon platforms have seen tremendous progress during the past decades.This article aims at giving an overview of supercontinuum generation in three main silicon-compatible photonics platforms,namely,silicon,silicon germanium,and silicon nitride,as well as the essential theoretical elements to understand this fascinating phenomenon.

Silicon photonics phase and intensity modulators for flat frequency comb generation

Flat electro-optical frequency combs play an important role in a wide range of applications,such as metrology,spectroscopy,or microwave photonics.As a key technology for the integration of optical circuits,silicon photonics could benefit from on-chip,tunable,flat frequency comb generators.In this article,two different architectures based on silicon modulators are studied for this purpose.They rely on a time to frequency conversion principle to shape the comb envelope.Using a numerical model of the silicon traveling-wave phase modulators,their driving schemes are optimized before their performances are simulated and compared.A total of nine lines could be obtained within a 2 dB flatness,with a line-spacing ranging from 0.1 to 7 GHz.Since this tunability is a major asset of electro-optical frequency combs,the effect of segmenting the phase modulators is finally investigated,showing that the flat lines spacing could be extended up to 39 GHz by this method.