本文采用直流磁控溅射方法在普通浮法玻璃基底上制备了立方多晶铁锰矿结构的铟锡氧化物(indium tin oxide, ITO)薄膜,并对其进行了结晶性、表面粗糙度、紫外-可见吸收光谱、折射率、介电常数及霍尔效应的测试.研究了溅射时基底温度的改...本文采用直流磁控溅射方法在普通浮法玻璃基底上制备了立方多晶铁锰矿结构的铟锡氧化物(indium tin oxide, ITO)薄膜,并对其进行了结晶性、表面粗糙度、紫外-可见吸收光谱、折射率、介电常数及霍尔效应的测试.研究了溅射时基底温度的改变对于ITO薄膜的光电、表面等离子体性质的影响.随着基底温度由100?C升高至500?C,其光学带隙(3.64—3.97eV)展宽,减少了电子带间跃迁的概率,有效降低了ITO薄膜的光学损耗.与此同时,对应ITO薄膜的载流子浓度(4.1×10^(20)-—2.48×10^(21)cm^(-3))与迁移率(24.6—32.2 cm^2·V^(-1)·s^(-1))得到提高,电学损耗明显降低.展开更多
C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophe...C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.展开更多
文摘本文采用直流磁控溅射方法在普通浮法玻璃基底上制备了立方多晶铁锰矿结构的铟锡氧化物(indium tin oxide, ITO)薄膜,并对其进行了结晶性、表面粗糙度、紫外-可见吸收光谱、折射率、介电常数及霍尔效应的测试.研究了溅射时基底温度的改变对于ITO薄膜的光电、表面等离子体性质的影响.随着基底温度由100?C升高至500?C,其光学带隙(3.64—3.97eV)展宽,减少了电子带间跃迁的概率,有效降低了ITO薄膜的光学损耗.与此同时,对应ITO薄膜的载流子浓度(4.1×10^(20)-—2.48×10^(21)cm^(-3))与迁移率(24.6—32.2 cm^2·V^(-1)·s^(-1))得到提高,电学损耗明显降低.
基金supported by the National Science Foundation for Post-Doctoral Scientists of China (Grant No.20100471667)the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) (Grant No.2011jjA40020)+1 种基金the National Natural Science Foundation of China (Grant Nos.60736005 and 61021061)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China (Grant No.GGRYJJ08-05)
文摘C60 field-effect transistor （OFET） with a mobility as high as 5.17 cm2/V.s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-（methyl methacrylate） （PMMA） insulator and a bathophenanthroline （Bphen）/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C60 film efficiently.
