We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold sym...We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.展开更多
The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching（RS） cells.Here we report the RS properties of Au/Ni O/Sr Ti O3（STO）/Pt memory ...The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching（RS） cells.Here we report the RS properties of Au/Ni O/Sr Ti O3（STO）/Pt memory cells.The switching repeatability is closely related to the applied bias polarity,which is different from the scenario of the Au/STO/Pt cells reported in our previous researches.The high resistance in positive bias is greater than that in negative bias.The R（T）–R0I^2 R（T） plot of the on-state I–V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias,respectively.These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode.The spatial RS location is identified with the weaker part along the conductance filament length direction,which should be near the Ni O/STO interface and STO/Pt interface under positive and negative bias,respectively.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.11974099)the Intelligence Introduction Plan of Henan Province,China in 2021(Grant No.CXJD2021008)+1 种基金the Plan for Leading Talent of Fundamental Research of the Central China in 2020the Key Scientific Research Project of Colleges and Universities in Henan Province,China(Grant No.21A140005)。
文摘We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.
基金Project supported by the National Natural Science Foundation of China(Grant No.11404093)the Foundation of Henan Provincial Science and Technology Department,China(Grant No.132102210258)+1 种基金the Research Funding from Henan Province,China(Grant Nos.15A140001,2015GGJS-021,and 17HASTIT014)the Henan University Emerging Cross and Characteristic Discipline Cultivation Program,China(Grant No.xxjc20140016)
文摘The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching（RS） cells.Here we report the RS properties of Au/Ni O/Sr Ti O3（STO）/Pt memory cells.The switching repeatability is closely related to the applied bias polarity,which is different from the scenario of the Au/STO/Pt cells reported in our previous researches.The high resistance in positive bias is greater than that in negative bias.The R（T）–R0I^2 R（T） plot of the on-state I–V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias,respectively.These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode.The spatial RS location is identified with the weaker part along the conductance filament length direction,which should be near the Ni O/STO interface and STO/Pt interface under positive and negative bias,respectively.
