TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-r...TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.展开更多
granular magnetic Co_(x)Cu_(1-x)(x=0.05-0.5)alloy ribbons were prepared by melt spinning method,and the structural,magnetotransport,magnetic properties and the effects of annealing on these properties were studied by ...granular magnetic Co_(x)Cu_(1-x)(x=0.05-0.5)alloy ribbons were prepared by melt spinning method,and the structural,magnetotransport,magnetic properties and the effects of annealing on these properties were studied by x-ray diffraction,vibrating sample magnetometer,magnetoresistance measurement at room temperature.Giant magnetoresistance was observed over a broad range of Co concentrations with a maximum magnetoresistance(MR)ratio of 7.8%(at x=0.20 and 500℃ annealing)under a magnetic field of 20kOe.The MR ratio increases with the annealing temperature and reaches a maximum at about 500℃ and then drops.The dependence of MR and magnetization on magnetic field for various granule parameters were studied by controlling the nucleation and growth of Co granules.展开更多
The injecting section and the cooler section are apart from each other at CSRm, while the electron cooler systemis installed at the injecting section of CSRe[1]. So for the CSRe we not only need to satisfy the beam in...The injecting section and the cooler section are apart from each other at CSRm, while the electron cooler systemis installed at the injecting section of CSRe[1]. So for the CSRe we not only need to satisfy the beam injectingcondition but also need to satisfy the beam cooling condition. At present, we use the ramping bump and the kickerto inject beam, and after injection the bump disappear quickly and the beam goes to the cooling orbit and begincooling. This method has a disadvantage that the beam cooling condition cannot be satised until the bump isdown. In the past year, we try to nd a new method to correct the orbit of cooler section. Instead of using rampingbump we use the xed bump to satisfy the injecting and the cooling condition at the same time.展开更多
Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were chara...Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of （002）. The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 cV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%（molar fraction）. Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%（molar fraction）.展开更多
基金supported by the Dalian Foundation for Development of Science and Technology (No.2006A13GX029)
文摘TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.
基金Supported by the National Natural Science Foundation of Chinaby the State Key Laboratory of Magnet ism,Institute of Physics,Chmese Academy of Sciences.
文摘granular magnetic Co_(x)Cu_(1-x)(x=0.05-0.5)alloy ribbons were prepared by melt spinning method,and the structural,magnetotransport,magnetic properties and the effects of annealing on these properties were studied by x-ray diffraction,vibrating sample magnetometer,magnetoresistance measurement at room temperature.Giant magnetoresistance was observed over a broad range of Co concentrations with a maximum magnetoresistance(MR)ratio of 7.8%(at x=0.20 and 500℃ annealing)under a magnetic field of 20kOe.The MR ratio increases with the annealing temperature and reaches a maximum at about 500℃ and then drops.The dependence of MR and magnetization on magnetic field for various granule parameters were studied by controlling the nucleation and growth of Co granules.
文摘The injecting section and the cooler section are apart from each other at CSRm, while the electron cooler systemis installed at the injecting section of CSRe[1]. So for the CSRe we not only need to satisfy the beam injectingcondition but also need to satisfy the beam cooling condition. At present, we use the ramping bump and the kickerto inject beam, and after injection the bump disappear quickly and the beam goes to the cooling orbit and begincooling. This method has a disadvantage that the beam cooling condition cannot be satised until the bump isdown. In the past year, we try to nd a new method to correct the orbit of cooler section. Instead of using rampingbump we use the xed bump to satisfy the injecting and the cooling condition at the same time.
基金Supported by the National Natural Science Foundation of China（Nos.51002018, 51302024）, the Program for Liaoning Excellent Talents in University, China（No.LJQ20122038）, the Higher Specialized Research Fund for the Doctoral Program of China（No.20122124110004）, the Dalian Science and Technology Plan Project, China（No.2010J21DW008） and the Qinghai Provincial Science and Technology Project, China（No.2012-Z-701）.
文摘Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of （002）. The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 cV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%（molar fraction）. Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%（molar fraction）.
