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Polarity-controllable magnetic skyrmion filter
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作者 Xiao-lin Ai Hui-Ting li +4 位作者 Xue-Feng Zhang chang-feng li Je-Ho Shim Xiao-Ping Ma Hong-Guang Piao 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第10期400-404,共5页
The skyrmion generator is one of the indispensable components for the future functional skyrmion devices,but the process of generating skyrmion cannot avoid mixing with other magnetic textures,such as skyrmionium and ... The skyrmion generator is one of the indispensable components for the future functional skyrmion devices,but the process of generating skyrmion cannot avoid mixing with other magnetic textures,such as skyrmionium and nested skyrmion bags.These mixed magnetic textures will inevitably lead to the blockage of skyrmion transport and even the distortion of data information.Therefore,the design of an efficient skyrmion filter is of great significance for the development of skyrmion-based spintronic devices.In this work,a skyrmion filter scheme is proposed,and the high-efficiency filtering function is demonstrated by micromagnetic simulations.The results show that the filtering effect of the scheme depends on the structure geometry and the spin current density that drives the skyrmion.Based on this scheme,the polarity of the filtered skyrmion can be controlled by switching the magnetization state at the output end,and the“cloning”of the skyrmion can be realized by geometric optimization of the structure.We believe that in the near future,the skyrmion filter will become one of the important components of skyrmion-based spintronic devices in the future. 展开更多
关键词 SPINTRONICS SKYRMIONS skyrmion filter skyrmion polarity skyrmion clone
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Differences in HER2 over-expression between proximal and distal gastric cancers in the Chinese population 被引量:13
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作者 Xiang-Shan Fan Jie-Yu Chen +5 位作者 chang-feng li Yi-Fen Zhang Fan-Qing Meng Hong-Yan Wu An-Ning Feng Qin Huang 《World Journal of Gastroenterology》 SCIE CAS 2013年第21期3316-3323,共8页
AIM: To investigate HER2 expression and its correlation with clinicopathological variables between proximal and distal gastric cancers (GC) in the Chinese population. METHODS: Immunostaining of HER2 was performed and ... AIM: To investigate HER2 expression and its correlation with clinicopathological variables between proximal and distal gastric cancers (GC) in the Chinese population. METHODS: Immunostaining of HER2 was performed and scored on a scale of 0-3 in 957 consecutive GC cases, according to the revised scoring criteria of HercepTest TM as used in the ToGA trial. Correlations between HER2 expression and clinicopathologic variables of proximal (n = 513) and distal (n = 444) GC were investigated. RESULTS: Our results showed that HER2 expression was significantly higher in the proximal than in distal GC (P < 0.05). Overall, HER2 expression was significantly higher in male patients (P < 0.01), the Lauren intestinal type (P < 0.001), low-grade (P < 0.001) and pM1 (P < 0.01) diseases, respectively. There was a significant difference in HER2 expression among some pTNM stages (P < 0.05). In contrast, HER2 expression in the distal GC was significantly higher in male patients (P < 0.001), low-grade histology (P < 0.001), the Lauren intestinal type(P < 0.001), and pM1 (P < 0.001). In the proximal GC, however, higher HER2 expression scores were observed only in tumors with low-grade histology (P < 0.001) and the Lauren intestinal type (P < 0.001). CONCLUSION: HER2 over-expression in GC of Chinese patients was significantly more common in proximal than in distal GC, and significantly correlated with the Lauren intestinal type and low-grade histology in both proximal and distal GC, and with pM1 disease and male gender in distal GC. 展开更多
关键词 HER2 GASTRIC cancer IMMUNOHISTOCHEMISTRY CLINICOPATHOLOGY
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Mathematical Model,Numerical Simulation and Convergence Analysis of a Semiconductor Device Problem with Heat and Magnetic Influences
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作者 chang-feng li Yi-rang YUAN Huai-ling SONG 《Acta Mathematicae Applicatae Sinica》 SCIE CSCD 2024年第2期302-319,共18页
In this paper,the authors discuss a three-dimensional problem of the semiconductor device type involved its mathematical description,numerical simulation and theoretical analysis.Two important factors,heat and magneti... In this paper,the authors discuss a three-dimensional problem of the semiconductor device type involved its mathematical description,numerical simulation and theoretical analysis.Two important factors,heat and magnetic influences are involved.The mathematical model is formulated by four nonlinear partial differential equations(PDEs),determining four major physical variables.The influences of magnetic fields are supposed to be weak,and the strength is parallel to the z-axis.The elliptic equation is treated by a block-centered method,and the law of conservation is preserved.The computational accuracy is improved one order.Other equations are convection-dominated,thus are approximated by upwind block-centered differences.Upwind difference can eliminate numerical dispersion and nonphysical oscillation.The diffusion is approximated by the block-centered difference,while the convection term is treated by upwind approximation.Furthermore,the unknowns and adjoint functions are computed at the same time.These characters play important roles in numerical computations of conductor device problems.Using the theories of priori analysis such as energy estimates,the principle of duality and mathematical inductions,an optimal estimates result is obtained.Then a composite numerical method is shown for solving this problem. 展开更多
关键词 three-dimensional conductor device problem with heat and magnetic influences upwind blockcentered differences elemental conservation of mass numerical analysis
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An Upwind Mixed Finite Volume Element-fractional Step Method and Convergence Analysis for Three-dimensional Compressible Contamination Treatment from Nuclear Waste
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作者 chang-feng li Yi-rang YUAN Huai-ling SONG 《Acta Mathematicae Applicatae Sinica》 SCIE CSCD 2023年第4期808-829,共22页
In this paper the authors discuss a numerical simulation problem of three-dimensional compressible contamination treatment from nuclear waste. The mathematical model, a nonlinear convection-diffusion system of four PD... In this paper the authors discuss a numerical simulation problem of three-dimensional compressible contamination treatment from nuclear waste. The mathematical model, a nonlinear convection-diffusion system of four PDEs, determines four major physical unknowns: the pressure, the concentrations of brine and radionuclide, and the temperature. The pressure is solved by a conservative mixed finite volume element method, and the computational accuracy is improved for Darcy velocity. Other unknowns are computed by a composite scheme of upwind approximation and mixed finite volume element. Numerical dispersion and nonphysical oscillation are eliminated, and the convection-dominated diffusion problems are solved well with high order computational accuracy. The mixed finite volume element is conservative locally, and get the objective functions and their adjoint vector functions simultaneously. The conservation nature is an important character in numerical simulation of underground fluid. Fractional step difference is introduced to solve the concentrations of radionuclide factors, and the computational work is shortened significantly by decomposing a three-dimensional problem into three successive one-dimensional problems. By the theory and technique of a priori estimates of differential equations, we derive an optimal order estimates in L2norm. Finally, numerical examples show the effectiveness and practicability for some actual problems. 展开更多
关键词 compressible nuclear waste contamination in porous media upwind mixed finite volume elementfractional step conservation of mass and energy convergence analysis numerical example
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A Mixed-finite Volume Element Coupled with the Method of Characteristic Fractional Step Difference for Simulating Transient Behavior of Semiconductor Device of Heat Conductor And Its Numerical Analysis 被引量:1
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作者 Yi-rang YUAN Qing YANG +1 位作者 chang-feng li Tong-jun SUN 《Acta Mathematicae Applicatae Sinica》 SCIE CSCD 2017年第4期1053-1072,共20页
The mathematical system is formulated by four partial differential equations combined with initial- boundary value conditions to describe transient behavior of three-dimensional semiconductor device with heat conducti... The mathematical system is formulated by four partial differential equations combined with initial- boundary value conditions to describe transient behavior of three-dimensional semiconductor device with heat conduction. The first equation of an elliptic type is defined with respect to the electric potential, the successive two equations of convection dominated diffusion type are given to define the electron concentration and the hole concentration, and the fourth equation of heat conductor is for the temperature. The electric potential appears in the equations of electron concentration, hole concentration and the temperature in the formation of the intensity. A mass conservative numerical approximation of the electric potential is presented by using the mixed finite volume element, and the accuracy of computation of the electric intensity is improved one order. The method of characteristic fractional step difference is applied to discretize the other three equations, where the hyperbolic terms are approximated by a difference quotient in the characteristics and the diffusion terms are discretized by the method of fractional step difference. The computation of three-dimensional problem works efficiently by dividing it into three one-dimensional subproblems and every subproblem is solved by the method of speedup in parallel. Using a pair of different grids (coarse partition and refined partition), piecewise threefold quadratic interpolation, variation theory, multiplicative commutation rule of differential operators, mathematical induction and priori estimates theory and special technique of differential equations, we derive an optimal second order estimate in L2-norm. This numerical method is valuable in the simulation of semiconductor device theoretically and actually, and gives a powerful tool to solve the international problem presented by J. Douglas, Jr. 展开更多
关键词 transient behavior of three-dimensional semiconductor device numerical simulation mixed finitevolume element modified characteristic fractional step difference second order estimate in L2 norm
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