Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)...Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are investigated.The drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton irradiation.When the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most serious.In the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase most.By comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation damage.The results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.展开更多
AIM: To study the prevalence and clinical biochemical, blood cell and metabolic features of lean-non-alcoholic fatty liver disease (lean-NAFLD) and its association with other diseases.
Hamaguchi et al recently reported some interesting observations on alcohol consumption and risk of fatty liver disease from a large population. However, we feel that it might be necessary to discuss some concerns in t...Hamaguchi et al recently reported some interesting observations on alcohol consumption and risk of fatty liver disease from a large population. However, we feel that it might be necessary to discuss some concerns in this study. As the alcohol consumption categorization was defined by the same criteria in both men and women, which might affect their results. As another factor is soft drinks consumption. It has been proved that soft drinks, especially fructose, contributes to the development of obesity, diabetes, metabolic syndrome, and nonalcoholic fatty liver disease. However, this confounding factor was not adjusted or discussed in this article. The third is the genetic background, for some genetic factors are related with the development of fatty liver disease, which was also not considered yet.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.12075065)。
文摘Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are investigated.The drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton irradiation.When the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most serious.In the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase most.By comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation damage.The results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.
基金Supported by National Natural Science Fund of China,No.81130049,No.8120218412~(th) China Five-Year Scientific and Technical Plan,No.2012BAI02B02
文摘AIM: To study the prevalence and clinical biochemical, blood cell and metabolic features of lean-non-alcoholic fatty liver disease (lean-NAFLD) and its association with other diseases.
基金Supported by The National Natural Science Foundation of China, No. 81202184Heilongjiang Provincial Post-Doctoral Fund, No. LBNZ-12193
文摘Hamaguchi et al recently reported some interesting observations on alcohol consumption and risk of fatty liver disease from a large population. However, we feel that it might be necessary to discuss some concerns in this study. As the alcohol consumption categorization was defined by the same criteria in both men and women, which might affect their results. As another factor is soft drinks consumption. It has been proved that soft drinks, especially fructose, contributes to the development of obesity, diabetes, metabolic syndrome, and nonalcoholic fatty liver disease. However, this confounding factor was not adjusted or discussed in this article. The third is the genetic background, for some genetic factors are related with the development of fatty liver disease, which was also not considered yet.
