This paper presents a novel high-Q silicon distributed Lamémode resonator(DLR)for VHF timing reference applications.The DLR employs the nature of shear wave propagation to enable a cascade of small square Lam...This paper presents a novel high-Q silicon distributed Lamémode resonator(DLR)for VHF timing reference applications.The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamémodes in beam or frame configurations with increased transduction area.Combined with high efficiency nano-gap capacitive transduction,it enables low motional impedances while scaling the frequency to VHF range.The DLR designs are robust against common process variations and demonstrate high manufacturability across different silicon substrates and process specifications.Fabricated DLRs in beam and frame configurations demonstrate high performance scalability with high Q-factors ranging from 50 to 250 k,motional impedances<1 kΩ,and high-temperature frequency turnover points>90°C in the VHF range,and are fabricated using a wafer-level-packaged HARPSS process.Packaged devices show excellent robustness against temperature cycling,device thinning,and aging effects,which makes them a great candidate for stable high frequency references in size-sensitive and power-sensitive 5 G and other IoT applications.展开更多
基金This work was supported by the DARPA Microsystems Technology Office,Single-Chip Timing and Inertial Measurement Unit(TIMU)program through SSC pacific contract#N66001-11-C-4176Advanced Inertial Micro Sensors(AIMS)program through contract#N66001-16-1-4064。
文摘This paper presents a novel high-Q silicon distributed Lamémode resonator(DLR)for VHF timing reference applications.The DLR employs the nature of shear wave propagation to enable a cascade of small square Lamémodes in beam or frame configurations with increased transduction area.Combined with high efficiency nano-gap capacitive transduction,it enables low motional impedances while scaling the frequency to VHF range.The DLR designs are robust against common process variations and demonstrate high manufacturability across different silicon substrates and process specifications.Fabricated DLRs in beam and frame configurations demonstrate high performance scalability with high Q-factors ranging from 50 to 250 k,motional impedances<1 kΩ,and high-temperature frequency turnover points>90°C in the VHF range,and are fabricated using a wafer-level-packaged HARPSS process.Packaged devices show excellent robustness against temperature cycling,device thinning,and aging effects,which makes them a great candidate for stable high frequency references in size-sensitive and power-sensitive 5 G and other IoT applications.
