Risk factors of CMV infection in patients after umbilical cord blood transplantation: a multicenter study in China

Objective： This retrospective study examined risk factors for cytomegalovirus （CMV） infection after umbilical cord blood transplantation （UCBT） and the impact of CMV infection on patient survival. Methods： In all 176 patients, plasma CMV DNA was negative prior to the transplantation, and examined twice a week for 100 d, and then once weekly for additional 300 d. Preemptive antiviral therapy （ganciclovir or foscarnet） was started in patients with 〉 1,000/mL copies of CMV DNA but no full-blown CMV disease, and was discontinued upon two consecutive negative reports of blood CMV DNA test. The survival and risk factors for CMV infection or disease were examined using logistic regression. Results： CMV infection developed in 71% （125/176） of the patients, with a median onset of 32 d. Four patients （2.3%） developed CMV disease. Neither the 5-year overall survival （OS） nor event-free survival （EFS） differed significantly in infected patients vs. those with no infection （59.4% vs. 64.8%, P=0.194; 53.4% vs. 59.1%, P=0.226）. A stepwise multivariate analysis indicated an association of CMV infection with age, high-dose glucocorticoids, the number of transplanted CD34^＋ cells, and the number of platelet transfusion, but not with gender, the conditioning regimen, and the day of neutrophil recovery and chronic graft-versus- host disease （cGVHD）. Conclusions： CMV infection is very common after UCBT, but does not seem to affect long-term survival with preemptive antiviral treatment.

Realization of high-performance tri-layer graphene saturable absorber mirror fabricated via a one-step transfer process

Graphene,as a saturable absorber(SA),has attracted much attention for its application in ultrashort pulse fiber lasers due to its ultrafast interband carrier relaxation and ultra-broadband wavelength operation.Nevertheless,during the stacking process of monolayer graphene layer,the induced nonuniform contact at the interface of graphene layers deteriorate the device performance.Herein,we report the fabrication of graphene saturable absorber mirrors(SAMs)via a one-step transfer process and the realization of the much enlarged modulation depth and the much reduced nonsaturable loss with tri-layer graphene(TLG)than single-layer graphene(SLG)due to the improved uniform contact at the interface.Moreover,the operation of 1550 nm mode-locked Er-doped fiber laser with the TLG SAM exhibits excellent output characteristics of the maximum output power of 9.9 mW,a slope efficiency of 2.4%and a pulse width of 714 fs.Our findings are expected to pave the way toward high-performance ultrashort pulse fiber lasers based on graphene SAs.

Quantum cascade superluminescent light emitters with high power and compact structure

Quantum cascade(QC)superluminescent light emitters(SLEs)have emerged as desirable broadband mid-infrared(MIR)light sources for growing number of applications in areas like medical imaging,gas sensing and national defense.However,it is challenging to obtain a practical high-power device due to the very low efficiency of spontaneous emission in the intersubband transitions in QC structures.Herein a design of^5μm SLEs is demonstrated with a two-phonon resonancebased QC active structure coupled with a compact combinatorial waveguide structure which comprises a short straight part adjacent to a tilted stripe and to a J-shaped waveguide.The as-fabricated SLEs achieve a high output power of 1.8 mW,exhibiting the potential to be integrated into array devices without taking up too much chip space.These results may facilitate the realization of SLE arrays to attain larger output power and pave the pathway towards the practical applications of broadband MIR light sources.

High-excited-state splitting and multimode vibrational coupling in Mn^(4+)-activated fluoride phosphor

Excited-states play a crucial role in the optical absorption and luminescence of solids and hence their accurate information is highly desired. Herein, we attempt to seize the excited-states information of Mn^(4+)ions in K_(2)SiF_(6) microcrystals via measuring and calculating their variable-temperature photoluminescence excitation(PLE) spectra. At cryogenic temperatures, an unpredicted splitting of the high-excited-state is observed. Moreover, the two-split high-excited-state levels are further revealed to primarily couple with the two hyperfine split modes of quasi-localized ν2 vibration in the distorted Mn-F_(6) octahedral configuration,whereas the coupling strengths are found to be substantially different from each other. The slightly split vibrational mode is firmly supported by the low-temperature Raman spectra. Jahn-Teller lattice distortion is believed to be responsible for the observed splitting of the electronic high-excited-state and the quasi-localized vibrational mode.

Sr_(2)LuNbO_(6):Mn^(4+)深红荧光粉的光学性质:晶体场劈裂和多模振动耦合

本研究利用光致发光(PL)、光致发光激发(PLE)、时间分辨PL和拉曼光谱技术等,详细研究了通过熔盐固相法合成的Sr_(2)LuNbO_(6):Mn^(4+)深红荧光粉的光学性质.在室温下,样品的PL光谱呈现出阶梯状谱形.然而,在低温下,测量的PL光谱由两组多模振动电子发光谱线组成.基于变温PL光谱和拉曼光谱,我们识别出双零声子谱线以及两组恒定能量间隔为~2.8 meV的多模声子伴线.这项研究首次发现Mn^(4+)离子的^(2)E_(g)激发态能级在氧化物八面体晶格中具有~2.8 meV能量差的劈裂,并证实多种振动模式深度参与Mn^(4+)离子的振动电子发光.

Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature： the self-absorption effect

It is firmly demonstrated in experiment that the self-absorption(SA) effect can lead to the extinction of the zero-phonon line and the first-order longitudinal optical phonon sideband of free excitonic luminescence of ZnO at room temperature. Moreover, effectiveness degree of SA effect is found to be dependent on both absorption coefficient and travelling distance of emitted photons, as well as even lattice temperature, which is uniquely reflected by the redshift amount in emission peak in ZnO. It is also unambiguously proved that the SA effect still strictly obeys the Beer-Lambert law of absorption. This work not only uncovers the long-term puzzle of significant redshift of emission peak of ZnO at higher temperatures, but also shows that the SA effect may have to be carefully taken into consideration in the study of spontaneous emission, laser and relevant optoelectronic processes in luminescent materials and optoelectronic devices.