Dynamics of photoluminescence(PL) and electroluminescence(EL) on nanosilicon deposited by Yb is investigated.The sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb.The enhanced EL ...Dynamics of photoluminescence(PL) and electroluminescence(EL) on nanosilicon deposited by Yb is investigated.The sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb.The enhanced EL peaks in the wavelength region from 1 200 nm to 1 600 nm are measured on silicon film deposited by Yb.It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si-Yb layers.The emission wavelength could be manipulated into the window of optical communication by SiYb bonding on nanosilicon.Si-Yb quantum cascade and PIN hybrid light-emitting diode is designed to apply in optical communicating,which is suitable to be integrated on silicon chip.展开更多
The photoluminescence(PL)dynamics of nano-silicon prepared in various environments is investigated,which involves the emission in nanostructures related to a wider band from 550 nm to 900 nm and the localized states e...The photoluminescence(PL)dynamics of nano-silicon prepared in various environments is investigated,which involves the emission in nanostructures related to a wider band from 550 nm to 900 nm and the localized states emission at 694 nm,605 nm,604 nm and 560 nm.It is observed that the sharp PL peak on the samples prepared in nitrogen has the shape of single tip near 605 nm,but the shape of twin tips always occurs in the two sharp peaks on the samples prepared in oxygen.The threshold behavior and the optical gain are discovered in the PL emission at 694 nm,605 nm and 604 nm.The experiments demonstrate that the optimum pressure to prepare samples in oxygen for the enhancement of emission near 700 nm is about 10~100 Pa,and the optimum one in oxygen for the enhancement of emission near 600 nm is about 1/10~1 Pa,while in high vacuum(<10μPa) the PL emission becomes weaker.展开更多
基金National Natural Science Foundation of China(Grant No.11264007)
文摘Dynamics of photoluminescence(PL) and electroluminescence(EL) on nanosilicon deposited by Yb is investigated.The sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb.The enhanced EL peaks in the wavelength region from 1 200 nm to 1 600 nm are measured on silicon film deposited by Yb.It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si-Yb layers.The emission wavelength could be manipulated into the window of optical communication by SiYb bonding on nanosilicon.Si-Yb quantum cascade and PIN hybrid light-emitting diode is designed to apply in optical communicating,which is suitable to be integrated on silicon chip.
基金National Natural Science Foundation of China(Grant No.11264007)
文摘The photoluminescence(PL)dynamics of nano-silicon prepared in various environments is investigated,which involves the emission in nanostructures related to a wider band from 550 nm to 900 nm and the localized states emission at 694 nm,605 nm,604 nm and 560 nm.It is observed that the sharp PL peak on the samples prepared in nitrogen has the shape of single tip near 605 nm,but the shape of twin tips always occurs in the two sharp peaks on the samples prepared in oxygen.The threshold behavior and the optical gain are discovered in the PL emission at 694 nm,605 nm and 604 nm.The experiments demonstrate that the optimum pressure to prepare samples in oxygen for the enhancement of emission near 700 nm is about 10~100 Pa,and the optimum one in oxygen for the enhancement of emission near 600 nm is about 1/10~1 Pa,while in high vacuum(<10μPa) the PL emission becomes weaker.
