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Theoretical investigations on the growth of graphene by oxygenassisted chemical vapor deposition
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作者 Xiaoli Sun chaojie yu +4 位作者 yujia Yang Zhihao Li Jianjian Shi Wanjian Yin Zhongfan Liu 《Nano Research》 SCIE EI CSCD 2024年第6期4645-4650,共6页
Recently,graphene has drawn considerable attention in the field of electronics,owing to its favorable conductivity and high carrier mobility.Crucial to the industrialization of graphene is its high-quality microfabric... Recently,graphene has drawn considerable attention in the field of electronics,owing to its favorable conductivity and high carrier mobility.Crucial to the industrialization of graphene is its high-quality microfabrication via chemical vapor deposition.However,many problems remain in its preparation,such as the not fully understood cracking mechanism of the carbon source,the mechanism of its substrate oxidation,and insufficient defect repair theory.To help close this capability gap,this study leverages density functional theory to explore the role of O in graphene growth.The effects of Cu substrate oxidation on carbon source cracking,nucleation barriers,crystal nucleus growth,and defect repairs are discussed.OCu was found to reduce energy change during dehydrogenation,rendering the process easier.Moreover,the adsorbed O in graphene or its Cu substrate can promote defect repair and edge growth. 展开更多
关键词 density functional theory oxygen-assisted graphene growth chemical vapor deposition Cu substrate
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