Modifying the Power and Performance of 2-Dimensional MoS_(2)Field Effect Transistors

Over the past 60 years,the semiconductor industry has been the core driver for the development of information technology,contributing to the birth of integrated circuits,Internet,artificial intelligence,and Internet of Things.Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node.Two-dimensional(2D)semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes.In the recent 10 years,the key issues on 2D semiconductors regarding material,processing,and integration have been overcome in sequence,making 2D semiconductors already on the verge of application.In this paper,the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors.We mainly focus on the optimization strategies of mobility(μ),equivalent oxide thickness(EOT),and contact resistance(RC),which enables high ON current(Ion)with reduced driving voltage(Vdd).Finally,we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.

Feasibility of Integrating Bimetallic Au-Ag Non-Alloys Nanoparticles Embedded in Reduced Graphene Oxide Photodetector

To coordinate the resonant wavelength of the plasmonic nanoparticles(NPs),the emission band of the reduced graphene oxide(rGO)photodetector at the NIR-region is crucial for the optimal plasmon-enhanced luminescence in the device.In contrast to monometallic NPs,where limits the dimensions and extended resonant wavelength,we integrated an Au-Ag bimetallic NPs(BMNPs)to enable resonance tuning at the longer wavelength at the excitation source of 785 nm.These features showed an increase in radiative recombination rates as well as the quantum yield efficiency of the device.The BMNPs were produced from the dewetting process of 600℃and 500℃,both at 1 min after the deposition thickness layer of Au(8 nm)and Ag(10 nm)on the Si substrate using the electron-beam evaporation process.Our BMNPs-rGO photodetector exhibited the responsivity of 2.25 A·W^(–1),Jones of specific detectivity of 2.45×10^(11)Jones,and external quantum efficiency(EQE)of 356%.The rise time and fall time for the photodetector were 32 ns and 186 ns,respectively.This work provided an essential information to enable the versatile plasmon-enhanced application in 2-dimensional(2D)material optoelectronic devices.