A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor...A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.展开更多
The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures.Experimental analysis showed that the barrier height（BH）of the Zr/pGa N Sc...The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures.Experimental analysis showed that the barrier height（BH）of the Zr/pGa N Schottky diode increases with annealing at 400°C（0.92 eV（I–V）/1.09 e V（C–V））compared to the asdeposited one（0.83 eV（I–V）/0.93 eV（C–V））.However,the BH decreases after annealing at 500°C.Also,at different annealing temperatures,the series resistance and BH are assessed by Cheung’s functions and their values compared.Further,the interface state density（NSS/of the diode decreases after annealing at 400°C and then somewhat rises upon annealing at 500°C.Analysis reveals that the maximum BH is obtained at 400°C,and thus the optimum annealing temperature is 400°C for the diode.The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr–N phases with increasing annealing up to 400°C.The BH reduces for the diode annealed at 500°C,which may be due to the formation of Ga–Zr phases at the junction.The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process.展开更多
文摘A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.
基金supported by the R&D Program for Industrial Core Technology(No.10045216)the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project(No.N0001363)Funded by the Ministry of Trade,Industry and Energy(MOTIE),Republic of Korea
文摘The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures.Experimental analysis showed that the barrier height（BH）of the Zr/pGa N Schottky diode increases with annealing at 400°C（0.92 eV（I–V）/1.09 e V（C–V））compared to the asdeposited one（0.83 eV（I–V）/0.93 eV（C–V））.However,the BH decreases after annealing at 500°C.Also,at different annealing temperatures,the series resistance and BH are assessed by Cheung’s functions and their values compared.Further,the interface state density（NSS/of the diode decreases after annealing at 400°C and then somewhat rises upon annealing at 500°C.Analysis reveals that the maximum BH is obtained at 400°C,and thus the optimum annealing temperature is 400°C for the diode.The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr–N phases with increasing annealing up to 400°C.The BH reduces for the diode annealed at 500°C,which may be due to the formation of Ga–Zr phases at the junction.The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process.
