Large Photoluminescence Enhancement by an Out-of-Plane Magnetic Field in Exfoliated WS2 Flakes

We report an out-of-plane magnetic field induced large photoluminescence enhancement in WS2 flakes at 4K,in contrast to the photoluminescence enhancement provided by an in-plane field in general.Two mechanisms for the enhancement are proposed.One is a larger overlap of the electron and hole caused by the magnetic field induced confinement.The other is that the energy difference between varLambda and K valleys is reduced by magnetic field,and thus enhancing the corresponding indirect-transition trions.Meanwhile,the Landé g factor of the trion is measured to be-0.8,whose absolute value is much smaller than normal exciton,which is around-4.A model for the trion gfactor is presented,confirming that the smaller absolute value of the Landé g factor is a behavior of this A–Ktrion.By extending the valley space,we believe this work provides a further understanding of the valleytronics in monolayer transition metal dichalcogenides.

Diabolical points in coupled active cavities with quantum emitters

In single microdisks,embedded active emitters intrinsically affect the cavity modes of the microdisks,resulting in trivial symmetric backscattering and low controllability.Here we demonstrate macroscopic control of the backscattering direction by optimizing the cavity size.The signature of the positive and negative backscattering directions in each single microdisk is confirmed with two strongly coupled microdisks.Furthermore,diabolical points are achieved at the resonance of the two microdisks,which agrees well with theoretical calculations considering the backscattering directions.Diabolical points in active optical structures pave the way for an implementation of quantum information processing with geometric phase in quantum photonic networks.

Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires

Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing.In this context,unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications.Here,we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende(WZ/ZB)crystal-phase quantum dots(QDs)realized in single InP nanowires.The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron microscopy.The electron(hole)g-factor tensor and the exciton diamagnetic coefficients in WZ/ZB crystal-phase QDs are determined through micro-photoluminescence measurements at low temperature(4.2 K)with different magnetic field configurations,and rationalized by invoking the spin-correlated orbital current model.Our work provides key parameters for band gap engineering and spin states control in crystal-phase low-dimensional structures in nanowires.

Observation of coupling between zero- and two- dimensional semiconductor systems based on anomalous diamagnetic effects

We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing.

Single-electron pumping in a ZnO single-nanobelt quantum dot transistor

Diluted magnetic semiconductors(DMSs)have traditionally been employed to implement spin-based quantum computing and quantum information processing.However,their low Curie temperature is a major hurdle in their use in this field,which creates the necessity for wide bandgap DMSs operating at room temperature.In view of this,a single-electron transistor(SET)with a global back-gate was built using a wide bandgap ZnO nanobelt(NB).Clear Coulomb oscillations were observed at 4.2 K.The periodicity of the Coulomb diamonds indicates that the Coulomb oscillations arise from single quantum dots of uniform size,whereas quasi-periodic Coulomb diamonds correspond to the contribution of multi-dots present in the ZnO NB.By applying an AC signal to the global back-gate across a Coulomb peak with varying frequencies,single-electron pumping was observed;the increase in current was equal to the production of electron charge and frequency.The current accuracy of about 1%for both single-and double-electron pumping was achieved at a high frequency of 25 MHz.This accurate single-electron pumping makes the ZnO NB SET suitable for single-spin injection and detection,which has great potential for applications in quantum information technology.