Ferroelectric field-effect transistors(FeFET)with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology.Herein,we demonstrate ferroelectric-gated n...Ferroelectric field-effect transistors(FeFET)with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology.Herein,we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS_(2)with ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))copolymer films.The ReS_(2)FeFET using hBN as substrate shows a large memory window of~30 V.Repeated write/erase operations are successfully performed by applying pulse voltage of±25 V with 1 ms width to the ferroelectric P(VDF-TrFE),and an ultra-high write/erase ratio of~107 can be achieved.Furthermore,the ReS_(2)FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles.These characteristics highlight that such ferroelectricgated nonvolatile memory has great potential in future non-volatile memory applications.展开更多
基金supported by the National Key Research&Development Projects of China(Nos.2016YFA0202300 and 2018FYA0305800)National Natural Science Foundation of China(Nos.61888102 and 51772087)+2 种基金Strategic Priority Research Program of Chinese Academy of Sciences(CAS,No.XDB30000000)Youth Innovation Promotion Association of CAS(No.Y201902)CAS Project for Young Scientists in Basic Research(No.YSBR-003).
文摘Ferroelectric field-effect transistors(FeFET)with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology.Herein,we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS_(2)with ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))copolymer films.The ReS_(2)FeFET using hBN as substrate shows a large memory window of~30 V.Repeated write/erase operations are successfully performed by applying pulse voltage of±25 V with 1 ms width to the ferroelectric P(VDF-TrFE),and an ultra-high write/erase ratio of~107 can be achieved.Furthermore,the ReS_(2)FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles.These characteristics highlight that such ferroelectricgated nonvolatile memory has great potential in future non-volatile memory applications.
