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Effect of Impurity on the Doping-Induced in-Gap States in a Mott Insulator 被引量:1
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作者 cheng-ping he Shun-Li Yu +1 位作者 Tao Xiang Jian-Xin Li 《Chinese Physics Letters》 SCIE EI CAS CSCD 2022年第5期82-86,共5页
Motivated by the recent measurements of the spatial distribution of single particle excitation states in a hole-doped Mott insulator,we study the effects of impurity on the in-gap states,induced by the doped holes,in ... Motivated by the recent measurements of the spatial distribution of single particle excitation states in a hole-doped Mott insulator,we study the effects of impurity on the in-gap states,induced by the doped holes,in the Hubbard model on the square lattice by the cluster perturbation theory.We find that a repulsive impurity potential can move the in-gap state from the lower Hubbard band towards the upper Hubbard band,providing a good account for the experimental observation.The distribution of the spectral function in the momentum space can be used to discriminate the in-gap state induced by doped holes and that by the impurity.The spatial characters of the in-gap states in the presence of two impurities are also discussed and compared to the experiment. 展开更多
关键词 THEORY HUBBARD MOMENTUM
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