Chalcopyrite,copper indium gallium selenide(Cu(In,Ga)Se_(2),CIGS),as semiconductor materials,have been widely used as absorbers in thin-film solar cells,offering high power conversion efficiency(PCE)and good thermal s...Chalcopyrite,copper indium gallium selenide(Cu(In,Ga)Se_(2),CIGS),as semiconductor materials,have been widely used as absorbers in thin-film solar cells,offering high power conversion efficiency(PCE)and good thermal stability[1−3].Recently,the development of non-traditional photovoltaic(PV)devices such as semitransparent.展开更多
To ensure the infiltration of spiro-OMeTAD into the quantum dot-sensitized photoanode and to consider the limit of the hole diffusion length in the spiro-OMeTAD layer, a rutile TiO2 nanorod array with a length of 200 ...To ensure the infiltration of spiro-OMeTAD into the quantum dot-sensitized photoanode and to consider the limit of the hole diffusion length in the spiro-OMeTAD layer, a rutile TiO2 nanorod array with a length of 200 nm, a diameter of 20 nm and an areal density of 720 ram 2 was successfully prepared using a hydrothermal method with an aqueous-grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 ℃ for 75 min. PbS quantum dots were deposited by a spin coating-assisted successive ionic layer adsorption and reaction (spin-SILAR), and all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells were fabricated using spiro-OMeTAD as electrolytes. The results revealed that the average crystal size of PbS quantum dots was -78 nm using Pb(NO3)2 as the lead source and remain unchanged with the increase of the number of spin-SILAR cycles. The all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells with spin-SILAR cycle numbers of 20, 30 and 40 achieved the photoelectric conversion efficiencies of 3.74%, 4.12% and 3.11%, respectively, under AM 1.5 G illumination (100 mW/cm2).展开更多
基金This work is supported by the National Natural Science Foundation of China(22075150)the National Key Research and Development Program of China(2019YFE0118100)+2 种基金L.Ding thanks the National Key Research and Development Program of China(2022YFB3803300)the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02)the National Natural Science Foundation of China(21961160720).
文摘Chalcopyrite,copper indium gallium selenide(Cu(In,Ga)Se_(2),CIGS),as semiconductor materials,have been widely used as absorbers in thin-film solar cells,offering high power conversion efficiency(PCE)and good thermal stability[1−3].Recently,the development of non-traditional photovoltaic(PV)devices such as semitransparent.
基金supported by the National Natural Science Foundation of China(51272061,51472071)
文摘To ensure the infiltration of spiro-OMeTAD into the quantum dot-sensitized photoanode and to consider the limit of the hole diffusion length in the spiro-OMeTAD layer, a rutile TiO2 nanorod array with a length of 200 nm, a diameter of 20 nm and an areal density of 720 ram 2 was successfully prepared using a hydrothermal method with an aqueous-grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 ℃ for 75 min. PbS quantum dots were deposited by a spin coating-assisted successive ionic layer adsorption and reaction (spin-SILAR), and all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells were fabricated using spiro-OMeTAD as electrolytes. The results revealed that the average crystal size of PbS quantum dots was -78 nm using Pb(NO3)2 as the lead source and remain unchanged with the increase of the number of spin-SILAR cycles. The all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells with spin-SILAR cycle numbers of 20, 30 and 40 achieved the photoelectric conversion efficiencies of 3.74%, 4.12% and 3.11%, respectively, under AM 1.5 G illumination (100 mW/cm2).