Compared to the conventional phase change materials,the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability.In this letter,the etching characteristics of Ta-S...Compared to the conventional phase change materials,the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability.In this letter,the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar.The results showed that when CF4/Ar=25/25,the etching power was 600 W and the etching pressure was 2.5 Pa,the etching speed was up to 61 nm/min.The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity(close to 90°),smooth surface of the etching(RMS was 0.51nm),and the etching uniformity was fine.Furthermore,the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy(XPS).The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction(XRD).展开更多
基金This work was financially supported by the Natural Science Foundation of China(61874129)the National Key Research and Development Program of China(2017YFB0405601).
文摘Compared to the conventional phase change materials,the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability.In this letter,the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar.The results showed that when CF4/Ar=25/25,the etching power was 600 W and the etching pressure was 2.5 Pa,the etching speed was up to 61 nm/min.The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity(close to 90°),smooth surface of the etching(RMS was 0.51nm),and the etching uniformity was fine.Furthermore,the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy(XPS).The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction(XRD).
