Two-dimensional(2D)non-layered materials,along with their unique surface properties,offer intriguing prospects for sensing applications.Introducing mechanical degrees of freedom is expected to enrich the sensing perfo...Two-dimensional(2D)non-layered materials,along with their unique surface properties,offer intriguing prospects for sensing applications.Introducing mechanical degrees of freedom is expected to enrich the sensing performances of 2D non-layered devices,such as high frequency,high tunability,and large dynamic range,which could lead to new types of high performance nanosensors.Here,we demonstrate 2D non-layered nanomechanical resonant sensors based onβ-In_(2)S_(3),where the devices exhibit robust nanomechanical vibrations up to the very high frequency(VHF)band.We show that such device can operate as pressure sensor with broad range(from 103 Torr to atmospheric pressure),high linearity(with a nonlinearity factor as low as 0.0071),and fast response(with an intrinsic response time less than 1μs).We further unveil the frequency scaling law in theseβ-In_(2)S_(3) nanomechanical sensors and successfully extract both the Young's modulus and pretension for the crystal.Our work paves the way towards future wafer-scale design and integrated sensors based on 2D non-layered materials.展开更多
Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential applications.Here,we realize efficient...Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential applications.Here,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in WS2.Our work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.展开更多
基金National Natural Science Foundation of China,Grant/Award Numbers:T2325007,62250073,U21A20459,62004026,61774029,62104029,12104086,U23A20570,51902346Sichuan Science and Technology Program,Grant/Award Numbers:24NSFSC5852,24NSFSC5853Science and Technology Innovation Program of Hunan Province,Grant/Award Number:2021RC3021。
文摘Two-dimensional(2D)non-layered materials,along with their unique surface properties,offer intriguing prospects for sensing applications.Introducing mechanical degrees of freedom is expected to enrich the sensing performances of 2D non-layered devices,such as high frequency,high tunability,and large dynamic range,which could lead to new types of high performance nanosensors.Here,we demonstrate 2D non-layered nanomechanical resonant sensors based onβ-In_(2)S_(3),where the devices exhibit robust nanomechanical vibrations up to the very high frequency(VHF)band.We show that such device can operate as pressure sensor with broad range(from 103 Torr to atmospheric pressure),high linearity(with a nonlinearity factor as low as 0.0071),and fast response(with an intrinsic response time less than 1μs).We further unveil the frequency scaling law in theseβ-In_(2)S_(3) nanomechanical sensors and successfully extract both the Young's modulus and pretension for the crystal.Our work paves the way towards future wafer-scale design and integrated sensors based on 2D non-layered materials.
基金supported by the National Natural Science Foundation of China(Grant Nos.T2325007,62250073,U21A20459,62004026,61774029,62104029,12104086,62150052,U23A20570,and 51902346)the Sichuan Science and Technology Program(Grant Nos.2021JDTD0028,2023NSFSC1334,24NSFSC5852,and 24NSFSC5853)the Science and Technology Innovation Program of Hunan Province(Grant No.2021RC3021)。
文摘Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential applications.Here,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in WS2.Our work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.
