Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates. Electron beam irradiation on the graphite s...Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates. Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition ofAl2O3. Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite. This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.展开更多
基金supposed by the Independent Innovation Foundation of Shandong University,China(No.2010TS023)the China Postdoctoral Special Foundation(No.200902556)+1 种基金the China Postdoctoral Science Foundation(No.20080431176)the Postdoctoral Innovation Foundation of Shandong Province,China(No.200702027)
文摘Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates. Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition ofAl2O3. Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite. This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.
