When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit （IC） electronics field. The parame...When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit （IC） electronics field. The parameters of such contacts can be determined from their current-voltage （I-V） characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate un- der a reverse bias. Accordingly, the present study proposed a generalized reverse current-voltage （I-V） plot which enables the series resis- tance, barrier height, and ideality factor of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theo- retical derivation of the proposed approach was presented and a series of validation tests were then performed. The results show that the pro- posed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.展开更多
基金financially supported by the Fund under Grant No.NSC95-2516-S-020-003
文摘When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit （IC） electronics field. The parameters of such contacts can be determined from their current-voltage （I-V） characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate un- der a reverse bias. Accordingly, the present study proposed a generalized reverse current-voltage （I-V） plot which enables the series resis- tance, barrier height, and ideality factor of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theo- retical derivation of the proposed approach was presented and a series of validation tests were then performed. The results show that the pro- posed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.
