Laser direct writing derived robust carbon nitride films with efficient photon-to-electron conversion for multifunctional photoelectrical applications

Carbon nitride,an emerging polymeric semiconductor,has attracted attention in research ranging from photocatalysis to photodetection due to its favorable visible light response and high physicochemical stability.For its practical device application,the fabrication of high-quality carbon nitride films on substrates is essential.However,conventional methodologies to achieve high polymerization of carbon nitride are often accompanied by its decomposition,significantly compromising the film quality.Herein,we report an ultrafast fabrication of carbon nitride film by laser direct writing(LDW).The instantaneous high temperature and pressure during LDW can efficiently boost the polymerization of carbon nitride and suppress its decomposition,resulting in high-quality carbon nitride film with excellent mechanical stability with the substrate.Due to the efficient photon-to-electron conversion,it exhibits an outstanding photoelectrochemical water splitting and optoelectronic detection capability,even under strong acid/alkaline conditions.This study thus offers a facile and efficient LDW strategy for the rapid fabrication of carbon nitride film photoelectrodes,demonstrating its great feasibility in multifunctional photoelectrical applications,including but not limited to photoelectrochemical water splitting and optoelectronic detection.

Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures

Excitonic devices are an emerging class of technology that utilizes excitons as carriers for encoding, transmitting, and storing information. Van der Waals heterostructures based on transition metal dichalcogenides often exhibit a type II band alignment, which facilitates the generation of interlayer excitons. As a bonded pair of electrons and holes in the separation layer, interlayer excitons offer the chance to investigate exciton transport due to their intrinsic out-of-plane dipole moment and extended exciton lifetime. Furthermore, interlayer excitons can potentially analyze other encoding strategies for information processing beyond the conventional utilization of spin and charge. The review provided valuable insights and recommendations for researchers studying interlayer excitonic devices within van der Waals heterostructures based on transition metal dichalcogenides. Firstly, we provide an overview of the essential attributes of transition metal dichalcogenide materials, focusing on their fundamental properties, excitonic effects, and the distinctive features exhibited by interlayer excitons in van der Waals heterostructures. Subsequently, this discourse emphasizes the recent advancements in interlayer excitonic devices founded on van der Waals heterostructures, with specific attention is given to the utilization of valley electronics for information processing, employing the valley index. In conclusion, this paper examines the potential and current challenges associated with excitonic devices.

Modulating p-type doping of two-dimensional material palladium diselenide

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies.Group-10 noble metal dichalcogenides(e.g.,PtS_(2),PtSe_(2),PdS_(2),and PdSe_(2))have been listed into two-dimensional(2D)materials toolkit to assemble van der Waals heterostructures.Among them,PdSe_(2) demonstrates advantages of high stability in air,high mobility,and wide tunable bandgap.However,the regulation of p-type doping of PdSe_(2) remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor physics.Besides,a quantitative method for the controllable doping of PdSe_(2) is yet to be reported.In this study,the doping level of PdSe_(2) was correlated with the concentration of Lewis acids,for example,SnCl_(4),used for soaking.Considering the transfer characteristics,the threshold voltage(the gate voltage corresponding to the minimum drain current)increased after SnCl_(4) soaking treatment.PdSe_(2) transistors were soaked in SnCl_(4) solutions with five different concentrations.The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation.This study provides in-depth insights into the controllable p-type doping of PdSe_(2).It may also push forward the research of the regulation of conductivity behaviors of 2D materials.