1 Introduction Hall effects plasma accelerators have been developed as plasma thrusters in satellite propulsion since the early 1960＇ s The hall plasma accelerator is based on closed drift of electrons in the crosse...1 Introduction Hall effects plasma accelerators have been developed as plasma thrusters in satellite propulsion since the early 1960＇ s The hall plasma accelerator is based on closed drift of electrons in the crossed E ×B fields and it is possible to obtain high current ion beam acceleration in quasi-neutral plasma. Recently, there have been growing interests in the generation of intense ion beam fluxes by hall accelerators for applications such as ion thrusters, plasma accelerators, and ion beam sources for surface modification.展开更多
1 Introduction Ion sources with wide energy and current ranges are used extensively in industrial applications such as ion implantation, etching, and deposition. Broad beam ion sources with a uniform current distribu...1 Introduction Ion sources with wide energy and current ranges are used extensively in industrial applications such as ion implantation, etching, and deposition. Broad beam ion sources with a uniform current distributions are needed for many industrial applications and development of commercial ion bean technologies for surface modification of materials is impossible without highly efficient, simple, and dependable ion sources. These and other needs have spurred the development of high efficiency ion sources that can produce ion beams with high energy and current and require low or no maintenance.展开更多
文摘1 Introduction Hall effects plasma accelerators have been developed as plasma thrusters in satellite propulsion since the early 1960＇ s The hall plasma accelerator is based on closed drift of electrons in the crossed E ×B fields and it is possible to obtain high current ion beam acceleration in quasi-neutral plasma. Recently, there have been growing interests in the generation of intense ion beam fluxes by hall accelerators for applications such as ion thrusters, plasma accelerators, and ion beam sources for surface modification.
文摘1 Introduction Ion sources with wide energy and current ranges are used extensively in industrial applications such as ion implantation, etching, and deposition. Broad beam ion sources with a uniform current distributions are needed for many industrial applications and development of commercial ion bean technologies for surface modification of materials is impossible without highly efficient, simple, and dependable ion sources. These and other needs have spurred the development of high efficiency ion sources that can produce ion beams with high energy and current and require low or no maintenance.
