Two-dimensional semiconductors,such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication,which could adversely affect device performance.To ensure high device yi...Two-dimensional semiconductors,such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication,which could adversely affect device performance.To ensure high device yield,uniformity and performance,the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations,adsorbates,and native oxides from the surface of Si wafers.A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed.In this study,we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone.The cleaning process not only preserves the intrinsic properties of monolayer MoS2,but also significantly improves the performance of monolayer MoS2 field-effect-transistors.Superior device on current of 12 μA·μm-1 for a channel length of 400 nm,contact resistance of 15 kΩ·μm,field-effect mobility of 15.5 cm^2·V^-1·s^-1,and the average on-off current ratio of 10^8 were successfully demonstrated.展开更多
文摘Two-dimensional semiconductors,such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication,which could adversely affect device performance.To ensure high device yield,uniformity and performance,the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations,adsorbates,and native oxides from the surface of Si wafers.A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed.In this study,we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone.The cleaning process not only preserves the intrinsic properties of monolayer MoS2,but also significantly improves the performance of monolayer MoS2 field-effect-transistors.Superior device on current of 12 μA·μm-1 for a channel length of 400 nm,contact resistance of 15 kΩ·μm,field-effect mobility of 15.5 cm^2·V^-1·s^-1,and the average on-off current ratio of 10^8 were successfully demonstrated.
