Recent findings of two-dimensional(2D)ferroelectric(FE)materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE de...Recent findings of two-dimensional(2D)ferroelectric(FE)materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness.In this paper,we report the in-situ fabrication and probing of electronic structures of In_(2)Se_(3)–WSe_(2) lateral heterostructures,compared with most vertical FE heterostructures at present.Through molecular beam epitaxy,we fabricated lateral heterostructures with monolayer WSe_2(three atomic layers)and monolayer In_(2)Se_(3)(five atomic layers).Type-Ⅱband alignment was found to exist in either the lateral heterostructure composed of anti-FEβ′-In_(2)Se_(3) and WSe_(2) or the lateral heterostructure composed of FEβ*-In_(2)Se_(3)and WSe_2,and the band offsets could be modulated by ferroelectric polarization.More interestingly,interface states in both lateral heterostructures acted as narrow gap quantum wires,and the band gap of the interface state in theβ*-In_(2)Se_(3)–WSe_(2)heterostructure was smaller than that in theβ′-In_(2)Se_(3)heterostructure.The fabrication of 2D FE heterostructure and the modulation of interface state provide a new platform for the development of FE devices.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs)with fascinating electronic energy band structures,rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest,and show g...Two-dimensional(2D)transition metal dichalcogenides(TMDs)with fascinating electronic energy band structures,rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest,and show great potential in electronic,optoelectronic,spintronic and valleytronic fields.Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures.Due to the low cost,high yield and industrial compatibility,chemical vapor deposition(CVD)is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures.Here,state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed,including wafer-scale synthesis,phase transition,doping,alloy and stacking engineering.Meanwhile,recent progress on the application of multi-functional devices is highlighted based on 2D TMDs.Finally,challenges and prospects are proposed for the practical device applications of 2D TMDs.展开更多
Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effe...Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.展开更多
基金the National Key R&D Program of China(Grant Nos.2018YFA0305800 and 2018YFA0703700)the National Natural Science Foundation of China(Grant Nos.11974012 and 12134011)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB3000000)。
文摘Recent findings of two-dimensional(2D)ferroelectric(FE)materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness.In this paper,we report the in-situ fabrication and probing of electronic structures of In_(2)Se_(3)–WSe_(2) lateral heterostructures,compared with most vertical FE heterostructures at present.Through molecular beam epitaxy,we fabricated lateral heterostructures with monolayer WSe_2(three atomic layers)and monolayer In_(2)Se_(3)(five atomic layers).Type-Ⅱband alignment was found to exist in either the lateral heterostructure composed of anti-FEβ′-In_(2)Se_(3) and WSe_(2) or the lateral heterostructure composed of FEβ*-In_(2)Se_(3)and WSe_2,and the band offsets could be modulated by ferroelectric polarization.More interestingly,interface states in both lateral heterostructures acted as narrow gap quantum wires,and the band gap of the interface state in theβ*-In_(2)Se_(3)–WSe_(2)heterostructure was smaller than that in theβ′-In_(2)Se_(3)heterostructure.The fabrication of 2D FE heterostructure and the modulation of interface state provide a new platform for the development of FE devices.
基金supported by the National Key R&D Program of China(No.2018YFA0703700,J.H.)the National Natural Science Foundation of China(Nos.91964203,J.H.,62004142,Y.W.,62134001,62104171,R.C.,62104172,L.Y.,62174122,Y.G.and 11774269,S.Y.)+3 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB44000000,J.H.)the Natural Science Foundation of Hubei Province,China(Nos.2021CFB037,R.C.and 2020CFA041,S.Y.)the Fundamental Research Funds for the Central Universities(No.2042021kf0067,R.C.)the Special Fund of Hubei Luojia Laboratory.
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)with fascinating electronic energy band structures,rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest,and show great potential in electronic,optoelectronic,spintronic and valleytronic fields.Stacking 2D TMDs have provided unprecedented opportunities for constructing artificial functional structures.Due to the low cost,high yield and industrial compatibility,chemical vapor deposition(CVD)is regarded as one of the most promising growth strategies to obtain high-quality and large-area 2D TMDs and heterostructures.Here,state-of-the-art strategies for preparing TMDs details of growth control and related heterostructures construction via CVD method are reviewed and discussed,including wafer-scale synthesis,phase transition,doping,alloy and stacking engineering.Meanwhile,recent progress on the application of multi-functional devices is highlighted based on 2D TMDs.Finally,challenges and prospects are proposed for the practical device applications of 2D TMDs.
基金the National Key Research and Development Program of China(No.2018YFB0406603)the National Natural Science Foundation of China(Nos.61574006,61522401,61927806,61521004,11634002,and U1632156)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB30000000).
文摘Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.
基金supported by the National Key R&D Program of China(2018YFA0703700)the National Natural Science Foundation of China(91964203,62104171,62104172,and 62004142)+2 种基金the Natural Science Foundation of Hubei Province(2021CFB037)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB44000000)the Fundamental Research Funds for the Central Universities(2042021kf0067)。