期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Annealing effect on structural and magnetic properties of Tb and Cr co-implanted AIGaN
1
作者 chun-hai yin Chao LIU +1 位作者 Dong-Yan TAO Yi-Ping ZENG 《Frontiers of Materials Science》 SCIE CSCD 2012年第4期366-370,共5页
Unintentionally doped AIGaN layers, which were co.implanted with 400 keV Tb+ ions and 200keV Cr+ ions at doses of 1.5×1015cm-2, have been rapid thermally annealed at 800℃ and 900℃ for 5 min in flowing N2, Com... Unintentionally doped AIGaN layers, which were co.implanted with 400 keV Tb+ ions and 200keV Cr+ ions at doses of 1.5×1015cm-2, have been rapid thermally annealed at 800℃ and 900℃ for 5 min in flowing N2, Compared with Tb implanted AIGaN sample, the Tb and Cr co-implanted sample revesls a larger magnetic signal. In this work, the annealing effect on the structural and magnetic properties of Tb and Cr co-implanted AIGaN thin films have been studied. XRD and raman scattering results indicate that no second phase presents in thetin films and mast of the implantation induced defects can be removed by post-implantation annealing. Superconducting quantum interference device (SQUID) measurements show clear room temperature ferromagnetic behavior and an increase in the saturation magnetization as a result of annealing. The saturation magnetization of the 900℃ annealed sample is about 15 times higher than that of the 800℃ annealed sample. 展开更多
关键词 diluted magnetic semiconductor (DMS). room temperature ferromagne-tism ion implantation ltl-ride thin film
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部