A fused-ring electron acceptor IDT-2BR1 based on indacenodithiophene core with hexyl side-chains flanked by benzothiadiazole rhodanine was designed and synthesized.In comparison with its counterpart with hexylphenyl s...A fused-ring electron acceptor IDT-2BR1 based on indacenodithiophene core with hexyl side-chains flanked by benzothiadiazole rhodanine was designed and synthesized.In comparison with its counterpart with hexylphenyl side-chains(IDT-2BR),IDT-2BR1exhibits higher highest occupied molecular orbital(HOMO)energy but similar lowest unoccupied molecular orbital(LUMO)energy(IDT-2BR1:HOMO=-5.37eV,LUMO=-3.67eV;IDT-2BR:HOMO=-5.52eV,LUMO=-3.69eV),red-shifted absorption and narrower bandgap.IDT-2BR1 has higher electron mobility(2.2×10^(-3)cm^2 V^(-1)s^(-1))than IDT-2BR(3.4×10^(-4)cm^2 V^(-1)s^(-1))due to the reduced steric hindrance and ordered molecular packing.Fullerene-free organic solar cells based on PTB7-Th:IDT-2BRl yield power conversion efficiencies up to 8.7%,higher than that of PTB7-Th:IDT-2BR(7.7%),with a high open circuit voltage of0.95 V and good device stability.展开更多
基金supported by the National Basic Research Program of China(2013CB834702)the National Natural Science Foundation of China(91433114)
文摘A fused-ring electron acceptor IDT-2BR1 based on indacenodithiophene core with hexyl side-chains flanked by benzothiadiazole rhodanine was designed and synthesized.In comparison with its counterpart with hexylphenyl side-chains(IDT-2BR),IDT-2BR1exhibits higher highest occupied molecular orbital(HOMO)energy but similar lowest unoccupied molecular orbital(LUMO)energy(IDT-2BR1:HOMO=-5.37eV,LUMO=-3.67eV;IDT-2BR:HOMO=-5.52eV,LUMO=-3.69eV),red-shifted absorption and narrower bandgap.IDT-2BR1 has higher electron mobility(2.2×10^(-3)cm^2 V^(-1)s^(-1))than IDT-2BR(3.4×10^(-4)cm^2 V^(-1)s^(-1))due to the reduced steric hindrance and ordered molecular packing.Fullerene-free organic solar cells based on PTB7-Th:IDT-2BRl yield power conversion efficiencies up to 8.7%,higher than that of PTB7-Th:IDT-2BR(7.7%),with a high open circuit voltage of0.95 V and good device stability.
