The instantaneous reversible soft logic upset induced by the electromagnetic interference（EMI） severely affects the performances and reliabilities of complementary metal–oxide–semiconductor（CMOS） inverters. This...The instantaneous reversible soft logic upset induced by the electromagnetic interference（EMI） severely affects the performances and reliabilities of complementary metal–oxide–semiconductor（CMOS） inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal–oxide–semiconductor field-effect transistor（MOSFET） in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.展开更多
The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrie...The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.60776034)the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(Grant No.2015-0214.XY.K)
文摘The instantaneous reversible soft logic upset induced by the electromagnetic interference（EMI） severely affects the performances and reliabilities of complementary metal–oxide–semiconductor（CMOS） inverters. This kind of soft logic upset is investigated in theory and simulation. Physics-based analysis is performed, and the result shows that the upset is caused by the non-equilibrium carrier accumulation in channels, which can ultimately lead to an abnormal turn-on of specific metal–oxide–semiconductor field-effect transistor（MOSFET） in CMOS inverter. Then a soft logic upset simulation model is introduced. Using this model, analysis of upset characteristic reveals an increasing susceptibility under higher injection powers, which accords well with experimental results, and the influences of EMI frequency and device size are studied respectively using the same model. The research indicates that in a range from L waveband to C waveband, lower interference frequency and smaller device size are more likely to be affected by the soft logic upset.
基金Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(Grant No.2015-0214.XY.K)
文摘The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.
