SnSe is a promising thermoelectric material with a high figure of merit in single crystal form, which has stimulated continuous research on polycrystalline SnSe. In this study, we investigated a metallization techniqu...SnSe is a promising thermoelectric material with a high figure of merit in single crystal form, which has stimulated continuous research on polycrystalline SnSe. In this study, we investigated a metallization techniques for polycrystalline SnSe to achieve highly efficient and practical SnSe thermoelectric modules. The Ag/Ni metallization layers were formed on pristine polycrystalline SnSe using various deposition technique: sputter coating Ni, powder Niand foil Ni by spark plasma sintering. Structural analysis demonstrated that the microstructure and con tact resistance could be different according to the metallization process, despite using the same metals. The Ag/Ni metallization layer using foil Ni acted as an effective diffusion barrier and minimized electrical contact resistance (2.3×10^-4Ωcm^2). A power loss in the thermoelectric module of only 5% was demonstrated using finite element simulation.展开更多
基金supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP)the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20172010000830)supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2015R1A5A1036133)
文摘SnSe is a promising thermoelectric material with a high figure of merit in single crystal form, which has stimulated continuous research on polycrystalline SnSe. In this study, we investigated a metallization techniques for polycrystalline SnSe to achieve highly efficient and practical SnSe thermoelectric modules. The Ag/Ni metallization layers were formed on pristine polycrystalline SnSe using various deposition technique: sputter coating Ni, powder Niand foil Ni by spark plasma sintering. Structural analysis demonstrated that the microstructure and con tact resistance could be different according to the metallization process, despite using the same metals. The Ag/Ni metallization layer using foil Ni acted as an effective diffusion barrier and minimized electrical contact resistance (2.3×10^-4Ωcm^2). A power loss in the thermoelectric module of only 5% was demonstrated using finite element simulation.
