<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity...<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation. </div>展开更多
文摘<div style="text-align:justify;"> In this study, a two-dimensional model describing thermal stress on a charge-coupled device (CCD) induced by ms laser pulses was examined. Considering the nonlinearity of the CCD’s material parameters and the melting phase transition process of aluminum electrode materials was considered by using equivalent specific heat capacity method, the physical process where a laser pulse irradiating a CCD pixel array was simulated using COMSOL Multiphysics software. The temperature field and thermal stress field were calculated and analyzed. In order to clarify the mechanism producing damage on the CCD detector, Raman spectra from silicon were measured with a micro-Raman spectrometer to determine stress change in the CCD chip. The procedure presented herein illustrates a method for evaluating strain in a CCD after laser irradiation. </div>
