We study the acoustomagnetoelectric (AME) effect in two-dimensional graphene with an energy bandgap using the semiclassical Boltzmann transport equation within the hypersound regime, (where represents the acoustic wav...We study the acoustomagnetoelectric (AME) effect in two-dimensional graphene with an energy bandgap using the semiclassical Boltzmann transport equation within the hypersound regime, (where represents the acoustic wavenumber and is the mean free path of the electron). The Boltzmann transport equation and other relevant equations were solved analytically to obtain an expression for the AME current density, consisting of longitudinal and Hall components. Our numerical results indicate that both components of the AME current densities display oscillatory behaviour. Furthermore, geometric resonances and Weiss oscillations were each defined using the relationship between the current density and Surface Acoustic Wave (SAW) frequency and the inverse of the applied magnetic field, respectively. Our results show that the AME current density of bandgap graphene, which can be controlled to suit a particular electronic device application, is smaller than that of (gapless) graphene and is therefore, more suited for nanophotonic device applications.展开更多
We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime ...We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime ?(q is the modulus of the acoustic wavevector and is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field, H, the acoustic wave frequency, , the temperature, T, the overlapping integral, , and the acoustic wavenumber, q. Qualitatively, the Hall-like current exists even if the relaxation time does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For and , the Hall-like current is in the absence of an electric field and in the presence of an electric field at 300 K. Similarly, the surface electric field due to the Hall-like current is in the absence of an external electric field. In the presence of an external electric field, and for at 300 K. q and can be used to tune the Hall-like current and of the FSWCNT. This offers the potential for room temperature application as an acoustic switch or transistor, as well as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone device in biomedical engineering.展开更多
文摘We study the acoustomagnetoelectric (AME) effect in two-dimensional graphene with an energy bandgap using the semiclassical Boltzmann transport equation within the hypersound regime, (where represents the acoustic wavenumber and is the mean free path of the electron). The Boltzmann transport equation and other relevant equations were solved analytically to obtain an expression for the AME current density, consisting of longitudinal and Hall components. Our numerical results indicate that both components of the AME current densities display oscillatory behaviour. Furthermore, geometric resonances and Weiss oscillations were each defined using the relationship between the current density and Surface Acoustic Wave (SAW) frequency and the inverse of the applied magnetic field, respectively. Our results show that the AME current density of bandgap graphene, which can be controlled to suit a particular electronic device application, is smaller than that of (gapless) graphene and is therefore, more suited for nanophotonic device applications.
文摘We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime ?(q is the modulus of the acoustic wavevector and is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field, H, the acoustic wave frequency, , the temperature, T, the overlapping integral, , and the acoustic wavenumber, q. Qualitatively, the Hall-like current exists even if the relaxation time does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For and , the Hall-like current is in the absence of an electric field and in the presence of an electric field at 300 K. Similarly, the surface electric field due to the Hall-like current is in the absence of an external electric field. In the presence of an external electric field, and for at 300 K. q and can be used to tune the Hall-like current and of the FSWCNT. This offers the potential for room temperature application as an acoustic switch or transistor, as well as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone device in biomedical engineering.
