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Growth of 4" diameter polycrystailine diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition 被引量:1
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作者 A F POPOVICH V G RALCHEnKO +6 位作者 V K BALLA A K MALLIK A A KHOMICH A P BOLSHAKOV d n sovyk E E ASHKInAZI V Yu YUROV 《Plasma Science and Technology》 SCIE EI CAS CSCD 2017年第3期93-97,共5页
Polycrystalline diamond(PCD) films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition(MPCVD) at different process parameters,and their thermal conductivity(TC) is evaluated by a l... Polycrystalline diamond(PCD) films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition(MPCVD) at different process parameters,and their thermal conductivity(TC) is evaluated by a laser flash technique(LFT) in the temperature range of230-380 K.The phase purity and quality of the films are assessed by micro-Raman spectroscopy based on the diamond Raman peak width and the amorphous carbon(a-C) presence in the spectra.Decreasing and increasing dependencies for TC with temperature are found for high and low quality samples,respectively.TC,as high as 1950 ± 230 W m-1 K-1 at room temperature,is measured for the most perfect material.A linear correlation between the TC at room temperature and the fraction of the diamond component in the Raman spectrum for the films is established. 展开更多
关键词 thermal conductivity polycrystalline diamond microwave plasma chemical vapordeposition Raman spectroscopy
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