Type I X-ray bursts are the most frequently observed thermonuclear explosions in nature[1].They take place on the surface of accreting neutron star in low-mass X-ray binary systems.
MnGa films were grown by magnetron sputtering on thermally oxidized Si（Si/SiO2） and glass substrates. Films grown on single-crystal Si（100） substrate with different underlayers were prepared for comparison. It is ...MnGa films were grown by magnetron sputtering on thermally oxidized Si（Si/SiO2） and glass substrates. Films grown on single-crystal Si（100） substrate with different underlayers were prepared for comparison. It is found that the Si/SiO2 substrate is more suitable for growing high-coercivity MnGa films than the glass substrate, which is the result of the isolated-island-like growth. A coercivity of 9.7 kOe can be achieved for the 10 nm MnGa films grown on Si/SiO2 substrate at substrate temperature TS of 450 °C.Optimized experimental conditions are specified by changing the thickness of the MnGa films and the temperature of the substrates.展开更多
基金National Key Research and Development Program of China(2016YFA0400503)。
文摘Type I X-ray bursts are the most frequently observed thermonuclear explosions in nature[1].They take place on the surface of accreting neutron star in low-mass X-ray binary systems.
基金financially supported by the National Natural Science Foundation of China (Nos. 51590883, 51471167, 51271179 and 51571194)the project of Chinese Academy of Sciences with grant number KJZD-EW-M05-3supported by a Joint Research Project from Ministry of Science, ICT and Future Planning/Korea Research Council for Industrial Science and Technology
文摘MnGa films were grown by magnetron sputtering on thermally oxidized Si（Si/SiO2） and glass substrates. Films grown on single-crystal Si（100） substrate with different underlayers were prepared for comparison. It is found that the Si/SiO2 substrate is more suitable for growing high-coercivity MnGa films than the glass substrate, which is the result of the isolated-island-like growth. A coercivity of 9.7 kOe can be achieved for the 10 nm MnGa films grown on Si/SiO2 substrate at substrate temperature TS of 450 °C.Optimized experimental conditions are specified by changing the thickness of the MnGa films and the temperature of the substrates.
