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Random-Gate-Voltage Induced Al'tshuler–Aronov–Spivak Effect in Topological Edge States
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作者 Kun Luo Wei Chen +1 位作者 Li Sheng d.y.xing 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第11期7-12,共6页
Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between ... Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between the topologically trivial and nontrivial phases. Here, we show that helical edge states can be identified by the randomgate-voltage induced Φ_(0)/2-period oscillation of the averaged electron return probability in the interferometer constructed by the edge states. The random gate voltage can highlight the Φ_(0)/2-period Al'tshuler–Aronov–Spivak oscillation proportional to sin^(2)(2πΦ/Φ_(0)) by quenching the Φ_(0)-period Aharonov–Bohm oscillation. It is found that the helical spin texture induced π Berry phase is key to such weak antilocalization behavior with zero return probability at Φ = 0. In contrast, the oscillation for the trivial edge states may exhibit either weak localization or antilocalization depending on the strength of the spin-orbit coupling, which has finite return probability at Φ = 0. Our results provide an effective way for the identification of the helical edge states. The predicted signature is stabilized by the time-reversal symmetry so that it is robust against disorder and does not require any fine adjustment of system. 展开更多
关键词 AAS Spivak Effect in Topological Edge States Aronov Random-Gate-Voltage Induced Al'tshuler
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