Photoreflectance was used to study the optical properties of single crystal hexagonal GaN finis on(0001)sapphire substrate grown by metalorganic chemical vapor deposition.The energy gap of GaN was determined as 3.400 ...Photoreflectance was used to study the optical properties of single crystal hexagonal GaN finis on(0001)sapphire substrate grown by metalorganic chemical vapor deposition.The energy gap of GaN was determined as 3.400 eV and the possible origin of the signal was discussed.Optical absorption and reflection were measured.The optical absorption edge of 3.38 eV,and the reilectivity peak at 3.3 eV, confirmed the results of photoreiiectance.展开更多
文摘Photoreflectance was used to study the optical properties of single crystal hexagonal GaN finis on(0001)sapphire substrate grown by metalorganic chemical vapor deposition.The energy gap of GaN was determined as 3.400 eV and the possible origin of the signal was discussed.Optical absorption and reflection were measured.The optical absorption edge of 3.38 eV,and the reilectivity peak at 3.3 eV, confirmed the results of photoreiiectance.
