Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and u...Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced.展开更多
As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experien...As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.展开更多
基金supported by the National Basic Research Program of China (2010CB934200 and 2008CB925002)the National Natural Science Foundation of China (60825403 and 50972160)the National High-Tech Research & Development Program of China (2008AA031403 and 2009AA03Z306)
文摘Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced.
基金supported by the National Basic Research Program of China (2011CB808404, 2009CB939703)the National Natural Science Foundation of China (60825403, 90607022, and 61001043)
文摘As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.
