We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward...We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.展开更多
Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from ...Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon(Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of^9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps, and25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.展开更多
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/N00762X/1,EP/N013247/1,EP/R004951/1)Royal Academy of Engineering(RF201617/16/33)+6 种基金National Research Foundation Singapore(NRF)(NRFCRP12-2013-04)Royal Society(UF150325)European Project Cosmicc(H2020-ICT-27-2015-688516)China Scholarship Council(CSC)State Key Laboratory of Advanced Optical Communication Systems and Networks,ChinaEuropean Research Council under the European Union’s Seventh Framework Programme(FP7/2007-2013)H2020 European Research Council(ERC)(291216)
文摘We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
基金H2020 European Research Council(ERC)(ERC POPSTAR No.647342)
文摘Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon(Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of^9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps, and25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.