We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward...We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.展开更多
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/N00762X/1,EP/N013247/1,EP/R004951/1)Royal Academy of Engineering(RF201617/16/33)+6 种基金National Research Foundation Singapore(NRF)(NRFCRP12-2013-04)Royal Society(UF150325)European Project Cosmicc(H2020-ICT-27-2015-688516)China Scholarship Council(CSC)State Key Laboratory of Advanced Optical Communication Systems and Networks,ChinaEuropean Research Council under the European Union’s Seventh Framework Programme(FP7/2007-2013)H2020 European Research Council(ERC)(291216)
文摘We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
