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Design of an on‑chip wavelength conversion device assisted by an erbium‑ytterbium co‑doped waveguide amplifier
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作者 Chen Zhou Xiwen He +3 位作者 Mingyue Xiao deyue ma Weibiao Chen Zhiping Zhou 《Frontiers of Optoelectronics》 EI CSCD 2024年第2期51-60,共10页
In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally fallin... In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond. 展开更多
关键词 Silicon-based optoelectronics Wavelength conversion Waveguide amplifier 2μm band
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On-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifiers
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作者 XIWEN HE deyue ma +3 位作者 CHEN ZHOU MINGYUE XIAO WEIBIAO CHEN ZHIPING ZHOU 《Photonics Research》 SCIE EI CAS CSCD 2024年第5期1067-1077,共11页
We propose for the first time,to the best of our knowledge,an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si_(3)N_(4)platform,which demonstrates high amplificati... We propose for the first time,to the best of our knowledge,an on-chip integrated few-mode erbium–ytterbium co-doped waveguide amplifier based on an 800 nm thick Si_(3)N_(4)platform,which demonstrates high amplification gains and low differential modal gains(DMGs)simultaneously.An eccentric waveguide structure and a co-propagating pumping scheme are adopted to balance the gain of each mode.A hybrid mode/polarization/wavelengthdivision(de)multiplexer with low insertion loss and crosstalk is used for multiplexing and demultiplexing in two operation wavebands centered at 1550 nm and 980 nm,where the light in these two bands serves as the signal light and pump light of the amplifier,respectively.The results demonstrate that with an input signal power of 0.1 mW,TE_(0)mode pump power of 300 mW,and TE_(1)mode pump power of 500 m W,the three signal modes(TE_(0)∕TM_(0)∕TE_(1))all exhibit amplification gains exceeding 30 dB,while maintaining a DMG of less than 0.1 dB. 展开更多
关键词 waveguide PUMP amplifier
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