When the applied field Ba=μ0 H_(a)(H_(a)>H_(p))is perpendicular to the surface of a disk-shaped superconducting thin film with the full penetrated field H_(p),the radius R,and the thickness d,a quantitative relati...When the applied field Ba=μ0 H_(a)(H_(a)>H_(p))is perpendicular to the surface of a disk-shaped superconducting thin film with the full penetrated field H_(p),the radius R,and the thickness d,a quantitative relation between the average fieldand the magnetization M is described by=μ_(0)[H_(a)+(0.81 d/R)M]for R»d,where the termμ0(0.81 d/R)M also is the average self-field of the film.Combining this relation with the magnetic flux conservation equation and the Arrhenius relation,the effective activation energy is extracted from the experimental magnetization relaxation and the dynamic magnetization relaxation,respectively.展开更多
Using finite-element analysis in a self-consistent way with the self-field of the current considered for superconducting thin film,the field and current distributions under partial field penetration are calculated bas...Using finite-element analysis in a self-consistent way with the self-field of the current considered for superconducting thin film,the field and current distributions under partial field penetration are calculated based on the field dependent critical current density function.The field penetrated depth is non-linear with the applied field.Due to the limited resolution of the vibrating sample magnetometer(VSM),the full penetrated field measured by VSM may be much smaller than its actual value.展开更多
Pb-doped HgBa_(2)CaCu_(2)O_(y) films were prepared on the(100)SrTiO_(3) substrate by using laser ablation followed by post-Hg-vapor annealing.These films are dominated by c-axis-oriented Hg-1212 phase as indicated by ...Pb-doped HgBa_(2)CaCu_(2)O_(y) films were prepared on the(100)SrTiO_(3) substrate by using laser ablation followed by post-Hg-vapor annealing.These films are dominated by c-axis-oriented Hg-1212 phase as indicated by x-ray diffraction and electromagnetic measurements.The transition temperature Tc0 is 110 K.The critical current density Jc achieved 10^(6) A/cm^(2) at 77K and zero applied field.展开更多
基金Supported by the National Foundation for Doctoral Educationthe National Center for Research and Development on Superconductivity of China.
文摘When the applied field Ba=μ0 H_(a)(H_(a)>H_(p))is perpendicular to the surface of a disk-shaped superconducting thin film with the full penetrated field H_(p),the radius R,and the thickness d,a quantitative relation between the average fieldand the magnetization M is described by=μ_(0)[H_(a)+(0.81 d/R)M]for R»d,where the termμ0(0.81 d/R)M also is the average self-field of the film.Combining this relation with the magnetic flux conservation equation and the Arrhenius relation,the effective activation energy is extracted from the experimental magnetization relaxation and the dynamic magnetization relaxation,respectively.
基金Supported by the National Foundation for Doctoral Educationthe National Center for Research and Development on Superconductivity.
文摘Using finite-element analysis in a self-consistent way with the self-field of the current considered for superconducting thin film,the field and current distributions under partial field penetration are calculated based on the field dependent critical current density function.The field penetrated depth is non-linear with the applied field.Due to the limited resolution of the vibrating sample magnetometer(VSM),the full penetrated field measured by VSM may be much smaller than its actual value.
基金Supported by the National Center for Research and Development on Superconductivity of Chinathe Foundation for Doctoral Education.
文摘Pb-doped HgBa_(2)CaCu_(2)O_(y) films were prepared on the(100)SrTiO_(3) substrate by using laser ablation followed by post-Hg-vapor annealing.These films are dominated by c-axis-oriented Hg-1212 phase as indicated by x-ray diffraction and electromagnetic measurements.The transition temperature Tc0 is 110 K.The critical current density Jc achieved 10^(6) A/cm^(2) at 77K and zero applied field.
