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Transmission Electron Microscopy Investigations of Misfit Dislocation Interactions in GaAs/InGaAs Superlattices on GaAs (001) Substrates
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作者 ZOU Jin JIANG Shusheng +3 位作者 djhcockayne ZHANG Yunwu GUO Xiang PENG Zhengfu 《Chinese Physics Letters》 SCIE CAS CSCD 1992年第7期367-370,共4页
The complex configurations and interactions of misfit dislocations in strained GaAs/InGaAs superlattices on GaAs(001)substrates have been studied by transmission electron microscopy under the two-beam or weak beam con... The complex configurations and interactions of misfit dislocations in strained GaAs/InGaAs superlattices on GaAs(001)substrates have been studied by transmission electron microscopy under the two-beam or weak beam conditions.The observed interactions between a pair of 60°misfit dislocations and an orthogonal 60°misfit dislocation are theoretically explained. 展开更多
关键词 GAAS/INGAAS conditions beam
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