期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
The Inorganic-organic Hybrid Junction with n-ZnO Nanorods/p-polyfluorene Structure Grown with Low-temperature Aqueous Chemical Growth Method
1
作者 吴伟 边继明 +5 位作者 SUN Yinglan CHENG Chuanhui SUN Jingchang LIANG Hongwei LUO Yingmin du guotong 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第2期296-300,共5页
The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods (NRs) grown by low-temperature aqueous chemical growth method and a p-type polyfluorene (P... The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods (NRs) grown by low-temperature aqueous chemical growth method and a p-type polyfluorene (PF) organic film fabricated by spin-coating. The experimental results indicate that densely and uniformly distributed ZnO nanorods are successfully grown on the PF layer. The thickness of the PF layer plays a dominant role for the current-voltage (I-V) characteristic of the ZnO NRs/PF inorganic-organic hybrid junction device, and a p-n junction with obviously rectifying behavior is achieved with optimal PF layer thickness. The photoluminescence (PL) spectrum covering the broad visible range was obtained from the n-ZnO nanorods/p-polyfluorene (PF) structure, which was originated from the combination of the PF-related blue emission and the ZnO-related deep level emission. 展开更多
关键词 ZnO nanorods POLYFLUORENE inorganic-organic hybrid junction PHOTOLUMINESCENCE
下载PDF
Comparative investigation of three types of ethanol sensor based on NiO-SnO_2 composite nanofibers 被引量:5
2
作者 SHEN RenSheng LI XiangPing +5 位作者 XIA XiaoChuan LIANG HongWei WU GuoGuang LIU Yang CHENG ChuanHui du guotong 《Chinese Science Bulletin》 SCIE CAS 2012年第17期2087-2093,共7页
NiO-SnO2 composite nanofibers were synthesized via electrospinning techniques and characterized by X-ray diffraction,scanning electron microscopy,transmission electron microscopy,and X-ray photoelectron spectroscopy.T... NiO-SnO2 composite nanofibers were synthesized via electrospinning techniques and characterized by X-ray diffraction,scanning electron microscopy,transmission electron microscopy,and X-ray photoelectron spectroscopy.Three types of sensor were applied to investigate the sensing properties of these nanofibers.Sensors A were fabricated by mixing the nanofibers with deionized water,and then grinding and coating them on ceramic tubes to form indirect heated gas sensors.Microsensors B(with an area of 600 μm×200 μm) were formed by spinning nanofibers on Si substrates with Pt signal electrodes and Pt heaters.Sensors C were fabricated by spinning nanofibers on plane ceramic substrates(with a large area of 13.4 mm×7 mm) with Ag-Pd signal electrodes only.The operating temperatures of sensors A and B were controlled by adjusting heater currents,and the operating temperatures of sensors C were controlled by adjusting an external temperature control device.Experimental results show that sensors C possess the highest sensing properties,such as high response values(about 42 to 100 μL/L ethanol),quick response/recovery speeds(the response and recovery times were 4 and 7 s,respectively),and excellent consistencies.These phenomena were explained by the retained fiber morphology and suitable sensor area.The presented results can provide some useful information for the design and optimization of one-dimensional nanomaterial-based gas sensors. 展开更多
关键词 复合纳米纤维 乙醇传感器 SNO2 类型 NIO 温度控制装置 X射线光电子能谱 扫描电子显微镜
原文传递
Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate
3
作者 YANG Dechao LIANG Hongwei +8 位作者 QIU Yu LI Pengchong LIU Yang SHEN Rensheng XIA Xiaochuan YU Zhennan CHANG Yuchun ZHANG Yuantao du guotong 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2014年第4期556-559,共4页
Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition.A selective growth of GaN nucleation laye... Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition.A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat,and the distribution morphology of GaN had significantly changed after it was recrystallized.GaN selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level. 展开更多
关键词 Patterned sapphire substrate GAN Selective growth Crystallographic plane
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部