An electron cyclotron resonance assisted plasma with N2 being the plasma source gas was employed to deposit hexagonal GaN on(0001)surface ofα-Al_(2)O_(3) substrate.By special gas distributor,trimethgallium was introd...An electron cyclotron resonance assisted plasma with N2 being the plasma source gas was employed to deposit hexagonal GaN on(0001)surface ofα-Al_(2)O_(3) substrate.By special gas distributor,trimethgallium was introduced into reactant zone.A 10×10mm uniform GaN film was gained with relatively low deposition temperature,560°C,and high growth rate of 1.4μm/h.A good crystal microstructure was confirmed by its spectrum with full width at half maximum of 15 arcmin.展开更多
文摘An electron cyclotron resonance assisted plasma with N2 being the plasma source gas was employed to deposit hexagonal GaN on(0001)surface ofα-Al_(2)O_(3) substrate.By special gas distributor,trimethgallium was introduced into reactant zone.A 10×10mm uniform GaN film was gained with relatively low deposition temperature,560°C,and high growth rate of 1.4μm/h.A good crystal microstructure was confirmed by its spectrum with full width at half maximum of 15 arcmin.