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Exchange Enhancement of Spin-Splitting in Al_(x)Ga_(1-x)/GaN Heterostructures in Tilted Magnetic Fields
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作者 TANG Ning HAN Kui +3 位作者 LU Fang-Chao duan jun-xi XU Fu-Jun SHEN Bo 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第3期188-190,共3页
Al_(x)Ga_(1-x)/GaN heterostructures are investigated by magnetotransport experiments in tilted magnetic fields at low temperatures.The spin-split peaks of the Shubnikov-de Haas(SdH)oscillations are observed at high ma... Al_(x)Ga_(1-x)/GaN heterostructures are investigated by magnetotransport experiments in tilted magnetic fields at low temperatures.The spin-split peaks of the Shubnikov-de Haas(SdH)oscillations are observed at high magnetic fields,which are attributed to the Zeeman spin-splitting of the two-dimensional electron gas at the heterointerface.The exchange enhanced g*of the spin-splitting is investigated by measuring the positions of the pairs of spin-split SdH maxima.Moreover,it is found that g^(*)becomes smaller with the increasing tilt angle,which suggests the anisotropy of g^(*)is due to the strong polarization-induced electric field at the Al_(x)Ga_(1-x)N/GaN heterointerface. 展开更多
关键词 polarization GAN SPLITTING
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Oscillations of Low-Field Magnetoresistivity of Two-Dimensional Electron Gases in Al_(0.22)Ga_(0.78)N/GaN Heterostructures in a Weak Localization Region
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作者 HAN Kui TANG Ning +8 位作者 duan jun-xi LU Fang-Chao LIU Yu-Chi SHEN Bo ZHOU Wen-Zheng LIN Tie SUN Lei YU Guo-Lin CHU Jun-Hao 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第8期262-265,共4页
Low-field magnetotransport properties of two-dimensional electron gases(2DEGs)are investigated in Al_(0.22)Ga_(0.78)N/GaN heterostructures.By means of a tilting magnetic field,unexpected oscillations of magnetoresisti... Low-field magnetotransport properties of two-dimensional electron gases(2DEGs)are investigated in Al_(0.22)Ga_(0.78)N/GaN heterostructures.By means of a tilting magnetic field,unexpected oscillations of magnetoresistivity are observed in a weak localization region.Qualitative understanding based on Altshuler–Aronov–Spivak oscillations is proposed for the case of interface disorder in Al_(0.22)Ga_(0.78)N/GaN heterostructures. 展开更多
关键词 N/Ga RESISTIVITY Electron
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