Low threshold and compact cw Nd:YVO_(4)self-Raman lasers at 1176 nm and sum-frequency mixing of fundamental and first-Stokes wavelengths are demonstrated.A 20-mm Nd:YVO_(4)crystal is adopted in a compact plane-concave...Low threshold and compact cw Nd:YVO_(4)self-Raman lasers at 1176 nm and sum-frequency mixing of fundamental and first-Stokes wavelengths are demonstrated.A 20-mm Nd:YVO_(4)crystal is adopted in a compact plane-concave resonator.The results show that the cw Raman conversion is sensitive to cavity length.At an incident pump power of 22.5 W,output power of 1.53 W at 1175.6 nm is achieved,corresponding to the threshold of only 0.8 W and the slop efficiency of 8.1%.Intra-cavity sum-frequency generation is realized in a type-Ⅱphase-matching cut KTP crystal,480 m W at 558.6 nm is obtained at incident pump power of 12 W.展开更多
We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAl...We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier.We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells ( Q Ws).The advances of the new Q W design are mainly rooted in the large ratio between conduction-band and valence-band offsets (△Ec:△Ev =7:1),higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3μm lasers.Due to the 1ow confinement energy of holes,non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced.The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation.展开更多
基金Supported by the National Natural Science Foundation of China(10904143)the Fund of Key Laboratory of Optoelectronic Materials Chemistry and Physics,Chinese Academy of Sciences(2008DP173016)。
文摘Low threshold and compact cw Nd:YVO_(4)self-Raman lasers at 1176 nm and sum-frequency mixing of fundamental and first-Stokes wavelengths are demonstrated.A 20-mm Nd:YVO_(4)crystal is adopted in a compact plane-concave resonator.The results show that the cw Raman conversion is sensitive to cavity length.At an incident pump power of 22.5 W,output power of 1.53 W at 1175.6 nm is achieved,corresponding to the threshold of only 0.8 W and the slop efficiency of 8.1%.Intra-cavity sum-frequency generation is realized in a type-Ⅱphase-matching cut KTP crystal,480 m W at 558.6 nm is obtained at incident pump power of 12 W.
基金Supported by the Hundred Talents Program of Chinese Academy of SciencesKey Research Project of Fujian Province under Grant No 2011HZ001-3.
文摘We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier.We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells ( Q Ws).The advances of the new Q W design are mainly rooted in the large ratio between conduction-band and valence-band offsets (△Ec:△Ev =7:1),higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3μm lasers.Due to the 1ow confinement energy of holes,non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced.The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation.
