Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam evaporation.Results of reflection high energy electron diffraction,atomic force microscopy,cross-section transmission electro...Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam evaporation.Results of reflection high energy electron diffraction,atomic force microscopy,cross-section transmission electron microscopy and Rutherford backscattering spectrometry and channeling(RBS/C)show a good quality of the epitaxial layer.Furthermore,silicon-on-insulator materials were successfully produced by bond and etch back of porous silicon.The quality of the silicon on insulator samples was investigated by RBS/C and spreading resistance profiling.Experimental results show that both the crystalline quality and electrical quality are good.In addition,the interface between the top Si layer and SiO2 buried layer is very sharp.展开更多
Aluminium nitride (AIN) films have been synthesized on Si(l00) substrates by ion-beam-enhanced deposition. The spreading resistance profile results suggest that the spreading resistance decreases with increasing rates...Aluminium nitride (AIN) films have been synthesized on Si(l00) substrates by ion-beam-enhanced deposition. The spreading resistance profile results suggest that the spreading resistance decreases with increasing rates of Al evaporation. If the evaporation rate of Al is higher than 2.5 A/s, the quality of the AIN film will greatly deteriorate. The spreading resistance of the best quality film deposited at 0.5 A/s rate of Al was larger than 108Ω. X-ray photoelectron spectroscopy measurements indicate the formation of AIN films at 0.5 and 1.0 A/s evaporation rates of Al. With the increasing evaporation rate of Al, the ratio of N to Al is decreased. When deposited at 0.5 and 1.0A/s evaporation rates of Al, the ratios of N to Al were 0.402:1 and 0.250:1, respectively. Atomic force microscopy observation also shows that the surfa:e of the AIN film formed at the 0.5 A/s rate is smoother and more uniform than that formed at 1.0 A/s.展开更多
基金Supported by the Special Funds for Major State Basic Research Projects(G20000365)the National Natural Science Foundation of China under Grant No.69906005the Shanghai Research Center for Applied Physics(No.99JC14012).
文摘Epitaxial monocrystalline Si was grown on porous silicon by ultra-high vacuum electron beam evaporation.Results of reflection high energy electron diffraction,atomic force microscopy,cross-section transmission electron microscopy and Rutherford backscattering spectrometry and channeling(RBS/C)show a good quality of the epitaxial layer.Furthermore,silicon-on-insulator materials were successfully produced by bond and etch back of porous silicon.The quality of the silicon on insulator samples was investigated by RBS/C and spreading resistance profiling.Experimental results show that both the crystalline quality and electrical quality are good.In addition,the interface between the top Si layer and SiO2 buried layer is very sharp.
基金Supported by the special funds for major state basic research projects No.G20000365the National Natural Science Foundation of China under Grant No.69976034。
文摘Aluminium nitride (AIN) films have been synthesized on Si(l00) substrates by ion-beam-enhanced deposition. The spreading resistance profile results suggest that the spreading resistance decreases with increasing rates of Al evaporation. If the evaporation rate of Al is higher than 2.5 A/s, the quality of the AIN film will greatly deteriorate. The spreading resistance of the best quality film deposited at 0.5 A/s rate of Al was larger than 108Ω. X-ray photoelectron spectroscopy measurements indicate the formation of AIN films at 0.5 and 1.0 A/s evaporation rates of Al. With the increasing evaporation rate of Al, the ratio of N to Al is decreased. When deposited at 0.5 and 1.0A/s evaporation rates of Al, the ratios of N to Al were 0.402:1 and 0.250:1, respectively. Atomic force microscopy observation also shows that the surfa:e of the AIN film formed at the 0.5 A/s rate is smoother and more uniform than that formed at 1.0 A/s.
