Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here w...Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.展开更多
Direct synthesis of high-quality graphene on dielectric substrates is of great importance for the application of graphene-based electronics and optoelectronics. However, high-quality and uniform graphene film growth o...Direct synthesis of high-quality graphene on dielectric substrates is of great importance for the application of graphene-based electronics and optoelectronics. However, high-quality and uniform graphene film growth on dielectric substrates has proven challenging due to limited catalytic ability of dielectric substrates. Here, by employing a Cu ion implantation assisted method, high-quality and uniform graphene can be directly formed on various dielectric substrates including SiO2/Si, quartz glass, and sapphire substrates. The growth rate of graphene on the dielectric substrates was significantly improved due to the catalysis of Cu. Moreover, during the graphene growth process, the Cu atoms gradually evaporated away without involving any metal contamination. Furthermore, an interesting growth behavior of graphene on sapphire substrate was observed, and the results show the graphene domains growth tends to grow along the sapphire flat terraces. The ion implantation assisted approach could open up a new pathway for the direct synthesis of graphene and promote the potential application of graphene in electronics.展开更多
Dear Editor,Acute stress-induced anxiety is pervasive in both animals and humans.The natural stress response effectively helps animals to maintain arousal,flee from danger,or simply stay alert to their surroundings.On...Dear Editor,Acute stress-induced anxiety is pervasive in both animals and humans.The natural stress response effectively helps animals to maintain arousal,flee from danger,or simply stay alert to their surroundings.On the other hand,excessive anxiety is strongly associated with many severe psychiatric disorders such as depression,phobia,and posttraumatic stress disorder(PTSD).Although the probability of an individual suffering clinical anxiety reaches an average of 28%during their lifetime,the underlying neural mechanisms of anxiety remain poorly understood.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11875077,11975037,and 11921006)the National Grand Instrument Project of China(Grant Nos.2019YFF01014400 and 2019YFF01014404).
文摘Laser-accelerated ion beams(LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.
基金This work was supported by National Natural Science and Foundation of China (NSFC) (No. 11875077)The authors acknowledge the support by the State Key Laboratory and Beijing Radiation Center.
文摘Direct synthesis of high-quality graphene on dielectric substrates is of great importance for the application of graphene-based electronics and optoelectronics. However, high-quality and uniform graphene film growth on dielectric substrates has proven challenging due to limited catalytic ability of dielectric substrates. Here, by employing a Cu ion implantation assisted method, high-quality and uniform graphene can be directly formed on various dielectric substrates including SiO2/Si, quartz glass, and sapphire substrates. The growth rate of graphene on the dielectric substrates was significantly improved due to the catalysis of Cu. Moreover, during the graphene growth process, the Cu atoms gradually evaporated away without involving any metal contamination. Furthermore, an interesting growth behavior of graphene on sapphire substrate was observed, and the results show the graphene domains growth tends to grow along the sapphire flat terraces. The ion implantation assisted approach could open up a new pathway for the direct synthesis of graphene and promote the potential application of graphene in electronics.
基金the National Natural Science Foundation of China(31970940,31671100,31622027,and 31671100)the Zhejiang Provincial Natural Science Foundation of China(LR18H090001)+1 种基金the Non-profit Central Research Institute Fund of the Chinese Academy of Medical Sciences(2018PT31041)the Program for Introducing Talents in Discipline to Universities,and the Fundamental Research Funds for Central Universities(2019QNA5001).
文摘Dear Editor,Acute stress-induced anxiety is pervasive in both animals and humans.The natural stress response effectively helps animals to maintain arousal,flee from danger,or simply stay alert to their surroundings.On the other hand,excessive anxiety is strongly associated with many severe psychiatric disorders such as depression,phobia,and posttraumatic stress disorder(PTSD).Although the probability of an individual suffering clinical anxiety reaches an average of 28%during their lifetime,the underlying neural mechanisms of anxiety remain poorly understood.