Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with tempera...Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.展开更多
The dipolar interactions are investigated through the asymmetric magneto-impedance in FINEMET/SiO_(2)/FePd composite ribbons.The interface between the hard(FePd layer)phase and soft(FINEMET ribbon)phase is coherent by...The dipolar interactions are investigated through the asymmetric magneto-impedance in FINEMET/SiO_(2)/FePd composite ribbons.The interface between the hard(FePd layer)phase and soft(FINEMET ribbon)phase is coherent by SiO_(2)layer in FINEMET/SiO_(2)/FePd composite ribbons,which effectively induces dipolar interactions.The contribution of dipolar interaction to the bias field(Hb)by asymmetrical giant magneto-impedance and magnetic properties is analyzed.The results show that Hb response decreases with the increase of the SiO_(2)layer thickness,indicating that the linear region near-zero field can be tuned by the thickness of SiO_(2)layer.These results allow the GMI ratio(58%)and characteristic frequency(500 kHz)to be optimized.The transverse and longitudinal magnetic domain structures of FINEMET ribbon and FePd film are confirmed,respectively.The composite ribbons with high GMI ratio and low frequency can be applied to linear magnetic sensors.展开更多
Sr-doped Ba_(0.7)La_(0.3)TiO_(3)(BSLTO)thin films are deposited by pulsed laser deposition,and their microstructure,conductivity,carrier transport mechanism,and ferroelectricity are systematically investigated.The x-r...Sr-doped Ba_(0.7)La_(0.3)TiO_(3)(BSLTO)thin films are deposited by pulsed laser deposition,and their microstructure,conductivity,carrier transport mechanism,and ferroelectricity are systematically investigated.The x-ray diffraction measurements demonstrate that Sr-doping reduces the lattice constant of BSLTO thin films,resulting in the enhanced phonon energy in the films as evidenced by the Raman measurements.Resistivity-temperature and Hall effect measurements demonstrate that Sr can gradually reduce electrical resistivity while the electron concentration remains almost unchanged at high temperatures.For the films with semiconducting behavior,the charge transport model transforms from variable range hopping to small polaron hopping as the measurement temperature increases.The metalic conductive behaviors in the films with Sr=0.30,0.40 conform to thermal phonon scattering mode.The difference in charge transport behavior dependent on the A-site cation doping,is clarified.It is revealed that the increasing of phonon energy by Sr doping is responsible for lower activation energy of small polaron hopping,higher carrier mobility,and lower electrical resistivity.Interestingly,the piezoelectric force microscopy(PFM)results demonstrate that all the BSLTO films can exhibit ferroelectricity,especially for the room temperature metallic conduction film with Sr=0.40.These results imply that Sr-doping could be a potential way to explore ferroelectric metal materials for other perovskite oxides.展开更多
This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of...This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))capacitors.Notably,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.展开更多
基金Hainan Provincial Natural Science Foundation of China(Grant No.523QN257)Collegelevel Scientific Research Foundation of Qiongtai Normal University(Grant No.qtqn202215)+6 种基金the Innovation and Entrepreneurship Training Program for College Students(Grant No.202213811016)Science and Technology Program of Henan(Grant No.232102210182)Scientific Research Foundation of Henan Normal University(Grant No.20230196)Natural Science Foundation of Shandong Province(Grant No.ZR2023QA047)Foundation of PeiXin(Grant No.2023PX027)Science and technology smes innovation ability improvement project(Grant No.2023TSGC0154)the National Natural Science Foundation of China(Grant No.62174059)。
文摘Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.
基金Project supported by the Natural Science Foundation of Shandong Province,China(Grant No.ZR2022MF276)the Major Innovation Fund of Qilu University of Technology(Shandong Academy of Science),China(Grant No.2022JBZ02-02)+1 种基金the Fund from Shanghai Science and Technology Commission,China(Grant No.22142200900)the Natural Science Foundation of Guangxi Zhuang Autonomous Region,China(Grant No.2019GXNSFAA245056).
文摘The dipolar interactions are investigated through the asymmetric magneto-impedance in FINEMET/SiO_(2)/FePd composite ribbons.The interface between the hard(FePd layer)phase and soft(FINEMET ribbon)phase is coherent by SiO_(2)layer in FINEMET/SiO_(2)/FePd composite ribbons,which effectively induces dipolar interactions.The contribution of dipolar interaction to the bias field(Hb)by asymmetrical giant magneto-impedance and magnetic properties is analyzed.The results show that Hb response decreases with the increase of the SiO_(2)layer thickness,indicating that the linear region near-zero field can be tuned by the thickness of SiO_(2)layer.These results allow the GMI ratio(58%)and characteristic frequency(500 kHz)to be optimized.The transverse and longitudinal magnetic domain structures of FINEMET ribbon and FePd film are confirmed,respectively.The composite ribbons with high GMI ratio and low frequency can be applied to linear magnetic sensors.
基金Project supported by the National Natural Science Foundation of China(Grant No.51872099)the Science and Technology Program of Guangzhou,China(Grant No.2019050001)+2 种基金the Fund from the Guangdong Provincial Key Laboratory of Optical Information Materials and Technology,China(Grant No.2017B030301007)the 111 Projec,Chinasponsored by the Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme,China(2016)。
文摘Sr-doped Ba_(0.7)La_(0.3)TiO_(3)(BSLTO)thin films are deposited by pulsed laser deposition,and their microstructure,conductivity,carrier transport mechanism,and ferroelectricity are systematically investigated.The x-ray diffraction measurements demonstrate that Sr-doping reduces the lattice constant of BSLTO thin films,resulting in the enhanced phonon energy in the films as evidenced by the Raman measurements.Resistivity-temperature and Hall effect measurements demonstrate that Sr can gradually reduce electrical resistivity while the electron concentration remains almost unchanged at high temperatures.For the films with semiconducting behavior,the charge transport model transforms from variable range hopping to small polaron hopping as the measurement temperature increases.The metalic conductive behaviors in the films with Sr=0.30,0.40 conform to thermal phonon scattering mode.The difference in charge transport behavior dependent on the A-site cation doping,is clarified.It is revealed that the increasing of phonon energy by Sr doping is responsible for lower activation energy of small polaron hopping,higher carrier mobility,and lower electrical resistivity.Interestingly,the piezoelectric force microscopy(PFM)results demonstrate that all the BSLTO films can exhibit ferroelectricity,especially for the room temperature metallic conduction film with Sr=0.40.These results imply that Sr-doping could be a potential way to explore ferroelectric metal materials for other perovskite oxides.
基金supported by the National Natural Science Foundation of China(62174059,51872099,and 91963102)Hong Kong Research Grant Council(15300619)+3 种基金Science and Technology Program of Guangzhou(201905-0001)Guangdong Science and Technology ProjectInternational Cooperation(2021A0505030064)the Program for Chang Jiang Scholars and Innovative Research Teams in Universities(IRT_17R40)the 111 Project。
基金financially supported by the National Natural Science Foundation of China(No.51872099)the Hong Kong Research Grant Council(No.15300619)+2 种基金the Science and Technology Program of Guangzhou(No.201905-0001)the Guangdong Science and Technology Project-International Cooperation(No.2021A0505030064)financial support by the Hong Kong Scholars Program(No.XJ2019006)。
文摘This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W electrode.The W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))capacitors.Notably,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 V.These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase formation.Moreover,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors.Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor.These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.
