Advanced organic devices and circuits demand both ultrahigh charge carrier mobilities and ultralow-resistance contacts.However,due to a larger access resistance in staggered organic thin-film transistors(OTFTs),the ac...Advanced organic devices and circuits demand both ultrahigh charge carrier mobilities and ultralow-resistance contacts.However,due to a larger access resistance in staggered organic thin-film transistors(OTFTs),the achievement of ultralow contact resistance(Rc)is still a challenge.The modulation of contact resistance by molecular layers near the interface has been rarely reported.Here,we demonstrate that fewlayer organic single crystals are grown on hafnium oxide(HfO_(2))by solution-shearing epitaxy.We utilize these organic crystals to fabricate bottom-gate staggered OTFTs with different contact processes.The results show that the contact properties of OTFTs are obviously modulated by crystal layers.The tri-layer(3L)evaporated-Au C10-DNTT OTFTs exhibit optimal electrical performance,including ultralow Rc of 5.6Ω⋅cm,recorded transfer length of 0.4μm,field-effect mobility over 14 cm^(2)V^(−1)s^(−1),threshold voltage lower than 0.3 V,and long-term air stability over 8 months.The main cause is that the metal atoms can penetrate into the charge transport layer,with damage-free,in 3L evaporated-Au OTFTs;nevertheless,it cannot be realized in other cases.Due to layer stacking of conjugated molecules and polymers,our strategy can efficiently modulate the contact resistance to aid the development of highperformance organic devices and circuits.展开更多
基金National Natural Science Foundation of China,Grant/Award Numbers:62074076,61927808,61734003,91964202,51861145202National Key R&D Program of China,Grant/Award Numbers:2021YFA1202903,2021YFA0715600,2021YFA1202903,and 2018YFB2200500+4 种基金Leading-edge Technology Program of Jiangsu Natural Science Foundation,Grant/Award Number:BK20202005Key Lab of Optoelectronic Devices and Systems with Extreme PerformancesCollaborative Innovation Center of Solid-State Lighting and Energy-Saving ElectronicsChina Postdoctoral Science Foundation,Grant/Award Number:2022M711564China National Postdoctoral Program for Innovative Talents,Grant/Award Number:BX2021119。
文摘Advanced organic devices and circuits demand both ultrahigh charge carrier mobilities and ultralow-resistance contacts.However,due to a larger access resistance in staggered organic thin-film transistors(OTFTs),the achievement of ultralow contact resistance(Rc)is still a challenge.The modulation of contact resistance by molecular layers near the interface has been rarely reported.Here,we demonstrate that fewlayer organic single crystals are grown on hafnium oxide(HfO_(2))by solution-shearing epitaxy.We utilize these organic crystals to fabricate bottom-gate staggered OTFTs with different contact processes.The results show that the contact properties of OTFTs are obviously modulated by crystal layers.The tri-layer(3L)evaporated-Au C10-DNTT OTFTs exhibit optimal electrical performance,including ultralow Rc of 5.6Ω⋅cm,recorded transfer length of 0.4μm,field-effect mobility over 14 cm^(2)V^(−1)s^(−1),threshold voltage lower than 0.3 V,and long-term air stability over 8 months.The main cause is that the metal atoms can penetrate into the charge transport layer,with damage-free,in 3L evaporated-Au OTFTs;nevertheless,it cannot be realized in other cases.Due to layer stacking of conjugated molecules and polymers,our strategy can efficiently modulate the contact resistance to aid the development of highperformance organic devices and circuits.
